The breakdown voltage increased from about -18 V with a conventional gate structure to about -38 V with the offset gate and was then limited by bulk breakdown in the film, rather than by the high fields near the gate drain overlap region. Simulations indicate that breakdown voltages of about...
The back gate (BG) induced breakdown mechanisms for thin layer SOI Field P-channel LDMOS (FPLDMOS) are investigated in this paper. Surface breakdown, bulk breakdown and punch-through breakdown are discussed, revealing that the block capability depends on not drain voltage (Vd), but also BG vol...
the thyristor, there is attained a semiconductor device having a satisfactory ignition characteristic, a low on-state voltage, and a high breakdown voltage... H Kobayashi - EP 被引量: 5发表: 1999年 The paper reviews the basic circuit issues of the bulk and SOI technology, and also shows th...
The back gate (BG) induced breakdown mechanisms for thin layer SOI Field P-channel LDMOS (FPLDMOS) are investigated in this paper. Surface breakdown, bulk breakdown and punch-through breakdown are discussed, revealing that the block capability depends on not drain voltage (V d ), but also BG...
(VT) should be smaller for the low power applications such as many portable devices. Interface quality along with the density of charge carriers trapped in the bulk and at the interface greatly controls theI-Vcharacteristics of OTFTs [142,143]. The threshold voltage is affected directly by ...
,Time dependent dielectric breakdown(TDDB)complicated by the dual-layer nature of the gate dielectric stacks ,Further reliabilitytopics remain important for MG HK CMOS technologies(e.g.,hot carrier degradation, low frequency noise,…) SEMATECH AGST Symposium 2010 6MG HK background: ...
The field plate () causes the potential drop across the drain drift region () to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, thereby substantially increasing the breakdown voltage of the device. 展开 ...
Hole accumulation layer induced by BG voltage ( provides extra charges, resulting in a reduction. An expression of equivalent is given to describe the dependence of on . Simultaneously, impacts strongly on BV, inducing three breakdown mechanisms: surface breakdown, bulk breakdown, and punchthrough ...
than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a). The field plate (24) causes the potential drop across the drain drift region (4a) to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, ...
Some structures have been proposed to increase the breakdown voltage by reducing the surface electric field at the end of the gate plate for the devices of which the breakdown voltage is under 100 V on the bulk silicon [3], [4], [5], [6]. Silicon-on-insulator (SOI) has emerged as ...