gatevoltage网页 图片 视频 学术 词典 航班 gate voltage 美 英 un.场效应晶体管栅压;控制极电压 网络闸极电压;门电压;栅电压 英汉 网络释义 un. 1. 场效应晶体管栅压 2. 控制极电压 隐私声明 法律声明 广告 反馈 © 2024 Microsoft
gate 【后缀】表示"政治丑闻"(因Watergate水门事件而造) Irangate 伊朗门事件(美国销售军火给伊朗的一连串非法事件) voltage n.[U,C]电压;伏特数 in gate 【计】 输入门 no voltage 零电压,无电压 gate post n. 门柱 double gate 双选通,双闸 lich gate n. 有钉盖的墓 gate(d)detector 门检波...
gate voltage专业解释gate voltage专业解释 栅极电压(Gate Voltage)是用于控制MOSFET(金属-氧化物-半导体场效应晶体管)的导电特性的电压。栅极电压由栅极与源极之间的电压决定,其变化可以改变MOSFET的导通和截止状态。当栅极电压高于MOSFET的阈值电压(Threshold Voltage)时,MOSFET处于导通状态,允许电流从漏极流入源极。漏极...
voltage名— 电流名 · 电位名 查看其他译文 © Linguee 词典, 2024 ▾ 外部资源(未审查的) EPC recognizes this weakness and is working toward improvingthegatemaximumvoltagerating. epc-co.com epc-co.com 宜普公司在认识到这个问题而致力提高栅极最高电压额定值。
It is shown that the effective channel length and the source-drain series resistance of an LDD device are gate-voltage dependent. The effective channel length of an LDD device is not necessarily the metallurgical junction separation between the source and drain as it is commonly seen in a ...
trigger gate voltage 触发控制极电压; 触发选通脉冲电压 trigger voltage 触发电压; 起动电压 ... tieba.baidu.com|基于2个网页 2. 触发选通脉冲电压 电力英语_百里无嫣吧_百度贴吧 ... trigger gate voltage 触发控制极电压; 触发选通脉冲电压 trigger voltage 触发电压; 起动电压 ... tieba.baidu.com|基于...
The flat-band voltage (VFB) is defined as the applied gate voltage such that there is no band bending (or no electric field) in the semiconductor and, as a result, zero net space charge in the region. From: Comprehensive Materials Processing, 2014 ...
A gate-voltage controlled ESD protection circuit is provided, which is designed to couple between an input port and an IC device having an inverter coupled to the internal circuit of the IC device for the purpose of protecting the IC device against ESD stress. The first potential drop ...
Thegate-voltagedependenceoftheelectronconcentrationineachsubbandexhibitssimilarbehaviourtothegate-voltage dependenceoftheelectronconcentrationinAlGaAs=GaAsheterostructures.?2002ElsevierScienceB.V.s. PACS:72.20.My;72.80.Ey;73.61.Ey Keywords:AlGaN;GaN;Two-dimensionalelectrongas;subband;Mao ...
Experimental data and calculated results are presented to show that the source and drain series resistances in GaAs MESFETs are gate-voltage dependent. This dependence is caused by the gate-voltage modulation of the ungated portions of the channel. A simple analytical model is proposed that account...