A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control is disclosed. The back-gate voltage generator circuit includes first and second n-type MOSFETs connected in series through a common source electrode. ...
Hi, I am currently designing an analog circuit and need to change the back gate (bulk) voltage of used MOS transistors. Usually bulk of MOS transistor is connected to VDD (PMOS) or VSS (NMOS). I would like to set bulk voltage Vb to other value, say 2.1 V (while VDD = 3.3 in thi...
A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control is disclosed. The back-gate voltage generator circuit includes first and second n-type MOSFETs connected in series through a common source electrode. ...
Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device. 展开 关键词: breakdown voltage back-gate bias effect self-heating effect silicon-on-insulator ...
Figure 4. (a) The field-effect carrier mobility of the MoS2 field effect transistor as a function of back-gate voltage in an ambient atmosphere. (b) The field-effect carrier mobility of the MoS2 field effect transistor as a function of back-gate voltage in a vacuum. The application of ...
Referring now to FIG. 4, an example current source transistor threshold voltage400as a function of the digital trim coefficients is shown. As shown, a resolution of the corresponding output trim DACs is 5-bit (i.e., the digital trim coefficients are 5 bits, providing values from 0 to 31...
Key building blocks – simple ternary inverter, positive ternary inverter and negative ternary inverter have been designed for operation at a low voltage –±1 V in 2 μm, n-well standard CMOS process and simulated in SPICE3 for use in the design of ternary logic circuits. The back-gate bi...
In this paper, we show that a simple and traditional MOSFET model, when including an accurate threshold voltage and gate-bias-dependent source/drain resistance, achieves a good visual fit to our measured data, in the linear regime, for a back-gated monolayer MoS2 FET. A four-point probe ...
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The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias ( V BG)–drain current ( I D) characteristics to V BG axis. The flat-band voltage decreased linearly with the number of implanted ions. The ...