CVD法负电荷效应界面态密度可动离子俘获截面平带电压空穴有效质量半导体器件本文介绍了用CVD方法分别在Si和InP上淀积了Al_2O_3膜.并用椭偏仪、高频C-V,准静态C-V、DLTS对Al_2O_3膜的性质及其与Si和InP的界面性质进行了测试分析.袁仁宽徐俊明半导体学报
其理论依据是根据难溶化合物溶度积(k_(sn))的不同,通过改变沉淀转化剂的浓度、转化温度以及借助表面活性剂来控制颗粒生长和防止颗粒团聚,获得单分散超微粒子。该法具有实验设备简单,原料成本低、工艺流程短、操作方便、产率高等优点。利用该法我们已经成功的制备出了Ni(OH)_2,NiO,CuO,La(OH)_3,ZnO,Co(OH)_2...
1) method of ECR plasma CVD 电子回旋共振等离子体化学汽相沉积法2) electron cyclotron resonance-microwave plasma chemical vapor deposition(ECR-MPCVD) 电子回旋共振-微波等离子体化学气相沉积3) ECR-PECVD 电子回旋共振等离子体增强化学气相沉积4) Microwave Electron Cyclotron Resonance Plasma Chemical Vapor ...
自1962年Eversole运用化学气相沉积(CVD)方法人工合成金刚石后,各种制造金刚石的CVD方法相继出现,主要包括热丝CVD(HFCVD)法、微波(MPCVD)法和直流等离子体炬CVD(DC Plasma-jet CVD)法等。现今,运用这些方法人工合成的金刚石表面粗糙度一般达到几十个微米,而热学、光学、微电子等工业应用要求金刚石表面粗糙度达到几十纳...
In this study, nanocomposite coatings consisting of the nitrides of Molybdenum and boron are deposited on Si using a hybrid ECR-CVD and sputtering of molybdenum using a BF 3–H 2–N 2 reactive gas mixture in He plasma. By controlling the gas ratio, the film composition and crystallinity can...
高密度等离子体增强型CVD 补充资料:等离子体增强化学气相沉积 等离子体增强化学气相沉积 plasma enhanced chemical vapor deposition 等离子体增强化学气相沉积plasma enhancedChemieal vapor deposition使原料气体在电场中成为等离子体状态,产生化学上非常活泼的激发态分子、原子、离子和原子团等,促进化学反应,在衬底表面上形成...
Yttrium oxide (Y 2 O 3 ) thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process at a substrate temperature of 350°C using indigenously developed metal organic precursors (2,2,6,6-tetra methyl-3,5-heptan...
ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD 9. Silicon on insulator (SOI) ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS MODELING OF 18O TRACER STUDIES...
Preparation of SrTiO[sub 3] thin films on Si(100) substrates by laser ablation: Application as Examines the deposition of SrTiO[sub 3] thin films on silicon(100) by pulsed laser ablation. Characterization of the films; Exhibition of (h00) or (hh0) pr... F SÁ,nchez,M Varela,......
为提高a -Si∶H薄膜的沉积速度 ,还重点介绍了一种新的微波电子回旋共振等离子体CVD(MWECR -CVD)技术 。5) Electron cyclotron resonance microwave plasma 电子回旋共振微波等离子体 例句>> 6) ECR sputtering method 电子回旋共振微波等离子体溅射补充资料:电子自旋共振(见电子回旋共振) 电子自旋共振(见电子回旋...