1. 电子回旋共振等离子体 2.1.1 微波电子回旋共振等离子体(ECR Plasma)简介15-16 cdmd.cnki.com.cn|基于1 个网页 例句 释义: 全部,电子回旋共振等离子体 更多例句筛选 1. It may be sure that the technology of ion source will be put to a new level by the development of the microwave ECR plasma....
1) ECR plasma ECR等离子体化学气相沉积 2) diamond-like carbon films 微波ECR等离子体化学气相沉积 3) EC EC 1. Study on the Size Distribution of Organic Carbon(OC) and Elemental Carbon(EC) in the Aerosol; 不同粒径大气颗粒物中有机碳(OC)和元素碳(EC)的分布 ...
flowrate while the form of a plasma transferring path formed in such a way that a plasma distribution becomes uniform on the surface of the substrate is held by a method wherein the introduction of the reactive gas into the plasma transferring path is performed through a specified gas ring. ...
We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs(001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (600掳C) on a homemade ECR-plasma Semiconductor Processing ...
低温等离子体应用调研报告ECRPlasmaProcessing-2- 在这种处理工艺条件下,离子成为重要的一种化学活性粒子组分,此时离子平均自由程大于离子壳层厚度.所以,通过在基板电极上加入独立的射频(RF)偏压,离子速度大小和方向可控,直接通过基片离子壳打在基片上.离子在穿过离子壳层时没有碰撞,以正常方式撞击基片.通过调整微波能量可...
网络电子回旋共振等离子体溅射 网络释义 1. 电子回旋共振等离子体溅射 ...射(Magnetron-sputtering) 和电子回旋共振等离子体溅射(ECR-plasma sputtering)等。 www.docin.com|基于 1 个网页
5) ECR plasma ECR等离子体 1. The microwave ECR plasma source device of state key laboratory of materials modification by laser,ion and electron beams belongs to Dalian University of Technology. 本文根据大连理工大学三束材料改性国家重点实验室的电子回旋共振(ECR)微波等离子实验装置,结合等离子体源中...
1. ECR-plasma source for treatment of semiconductor structures in semiconductor devices or integrated circuits manufacturing, comprising a reactor comprising a substrate holder capable of holding semiconductor structures, an evacuation system capable of providing ultrahigh vacuum, a magnetic system, a microwa...
Yttrium oxide (Y 2 O 3 ) thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process at a substrate temperature of 350°C using indigenously developed metal organic precursors (2,2,6,6-tetra methyl-3,5-heptan...
ECR plasma apparatus 专利名称：ECR plasma apparatus 发明人：Masayasu Suzuki,Satoko Ishii 申请号：US09534168 申请日：20000324 公开号：US06305315B1 公开日：20011023 专利内容由知识产权出版社提供 专利附图：摘要：An ECR plasma apparatus is formed of a vacuum chamber, a cavity disposed at a side surface...