S. KasouitK. HirataL. KroelyP. Roca i CabarrocasKasouit S, Hirata K, Kroely L, Roca i Cabarrocas P, MDECR plasma deposition of microcrystalline silicon as an alternative to RF capacitive methods, EU-PVSEC Proc., pp. 3138-3140, 2010....
4) Microwave-ECR Plasma 微波ECR等离子体 5) ECR plasma source ECR等离子体源 6) ECR plasma deposition ECR等离子体沉积 例句>> 补充资料:等之 1.同等;等同于。 说明:补充资料仅用于学习参考,请勿用于其它任何用途。 参考词条
Abu Samra, H., Staedler, T., Aronov, I., Xia, J., Jia, C., Wenclawiak, B., Jiang, X.: Deposition and characterisation of nanocrystalline Mo 2 N/BN composite coatings by ECR plasma assisted CVD. Surf. Coat. Technol. 204 , 1919–1924 (2010)...
When silicon thin films are deposited by plasma enhanced chemical vapour deposition in a plasma regime close to that of the formation of powder, a new type of material, called polymorphous silicon (pm-Si), is obtained. We present here th... R Butté,R Meaudre,M Meaudre,... - 《Philoso...
Surface modification, thin-film deposition and etching and other technical processes involve the use of plasma discharges. Quantitative characterization of plasma sources has become increasingly important as it provides a fundamental understanding of plasma sources and allows for the technological optimization...
3) electron cyclotron resonance plasma 电子回旋共振等离子体 1. The radicals of CHF3,C6H6 and CHF3/C6H6 plasmas were measured by a quadruple mass spectrometer and an optical emission spectrometer in an electron cyclotron resonance plasma chemical vapor deposition system. 在一个微波电子回旋共振...
说明了微波ECR-MOPECVD法具有在低温下生长GaN薄膜的优势。关键词：ECR等离子体；ECR-PEMOCVD；GaN薄膜 1．实验设备和薄膜生长过程 作为第三代半导体材料的GaN基蓝光薄膜材料，由于其宽禁带、高亮度、低能耗，并因其和红光、绿光一起构成白光的三基色，在平板显示、光存储、蓝光激光器和功率晶体管等光电子领域将发挥...
With these advantages, Microwave ECR plasma finds number of applications in the areas of etching technologies, thin film deposition and plasma source. 微波ECR等离子体还具有无内极放电和放电离子低溅射率的优点,正是由于这些优点,使其在刻蚀技术、薄膜制备技术和离子源等方面得到了广泛应用。3) Microwave-ECR...
Yttrium oxide (Y 2 O 3 ) thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process at a substrate temperature of 350°C using indigenously developed metal organic precursors (2,2,6,6-tetra methyl-3,5-heptan...
The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition ... K No,JS Lee,WS Han,... - 《Mrs Proceedings》 被...