The present invention provides a high efficiency sputtering device which has high usage efficiency of a target, and is able to easily obtain a thin film of a large area and high performance at high speeds when compared with an existing technique. The sputtering device is a device to form the...
1) ECR sputtering ECR微波等离子体反应溅射 2) Microwave ECR plasma 微波ECR等离子体 1. This system is applied to the measurement of microwave ECR plasma inner parameters and proved to work well. 将该系统应用于微波ECR等离子体参数的测定,经实验测试效果较好。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering. 利用微波ECR等离子体增强磁控溅射沉积技术在玻璃表面制备了矽膜。 www.ceps.com.tw 3. The results show that the ECR plasma source may generate stable, high density plasma with low ...
ECR plasma-assisted sputteringYBa2Cu3O7−y filmsoptical emission spectroscopy analysisUsing ECR plasma assisted-sputtering, epitaxial growth of YBa2Cu3O7y films with c -axis orientation has been accomplished on a (100) SrTiO3 subsrate. The YBa2Cu3O7yfilms prepared by the ECR......
5) Electron cyclotron resonance microwave plasma 电子回旋共振微波等离子体 例句>> 6) ECR sputtering method 电子回旋共振微波等离子体溅射补充资料:电子自旋共振(见电子回旋共振) 电子自旋共振(见电子回旋共振) electron spin resonance 电子自旋共振eleetron spin resonanee见电子回旋共振。 说明:补充资料仅用于...
Cross-linked graphene layer embedded carbon film prepared using electron irradiation in ECR plasma sputtering. Surf Coat Technol 206: 1899-1904 (2011)Wang C,Diao D F. Cross-linked graphene layer embedded carbon film prepared using electron irradiation in ECR plasma sputtering[J].Surface and ...
In this study, nanocomposite coatings consisting of the nitrides of Molybdenum and boron are deposited on Si using a hybrid ECR-CVD and sputtering of molybdenum using a BF 3–H 2–N 2 reactive gas mixture in He plasma. By controlling the gas ratio, the film composition and crystallinity can...
In-situ formations of HfN/HfON gate stack structures utilizing ECR sputtering were investigated to decrease the equivalent oxide thickness (EOT), and also reduce the leakage current. 1nm-thick HfN thin films on three-dimensional Si structures were oxidized by ECR-Ar/O_2 plasma. After the in-...
sputtering of a metal, and stripping of the resist, wherein the precision etching and growing of the dielectric comprises microwave frequency plasma enhancement under electron cyclotron resonance with a radio-frequency bias of the substrate in a plasma source, a reactor of the source having nonreson...
1. MW-ECR Plasma Enhanced Unbalance Magnetron Sputtering and Carbon Nitride Films Preparation; 微波-ECR等离子体增强非平衡磁控溅射技术及CN薄膜的制备研究 2. The Properties of Ultra-thin a-SiN_x Films Prepared by Microwave ECR Magnetic Sputtering; ...