Lateral double-diffused mosfet A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings for... M Hoshi,T Mihara - ...
从而,不会降低L-DMOSFET的本来的特性,并且不需增大元件面积便可实现高的抗静电击穿耐压. Thus, does not reduce the original property of L-DMOSFET, and can be realized without increasing the element area antistatic high breakdown voltage.滨泽靖史...
We propose a new method to extract the effective channel length for a double-diffused MOSFET (DMOSFET). This method models the DMOSFET by using two MOSFETs serially connected to each other. The effective channel lengths for these two MOSFETs are extracted from the single relation between the ef...
Double diffused mosfet with potential biases 专利内容由知识产权出版社提供 专利名称:Double diffused mosfet with potential biases 发明人:Koji Shirai 申请号:US07/132032 申请日:19871214 公开号:US04 884 116A 公开日:19891128 摘要:First and second single crystal silicon substrates are integrated, by means...
In a DMOSFET configured as having a drain region composed of an epitaxial layer formed on a P-type semiconductor substrate while placing an N-type buried layer in between, and as having, in the drain region, a P-type body region having an N-type source region nested therein and a drain...
As-P(N** plus -N** minus ) DOUBLE DIFFUSED DRAIN MOSFET FOR VLSIs A comparison of device characteristics of n-channel and p-channel MOSFET's is made from the overall viewpoint of VLSI construction. Hot-carrier-related dev... E Takeda,H Kume,Y Nakagome,... - Digest of Technical Pap...
A double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device comprising an insulating layer having an opening on the top surface of a semiconductor wafer, channel regions and well regions and source regions formed through two stage deffusions of impurity materials respectively of...
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumul...
A trench MOSFET device and process for making the same are described. The trench MOSFET has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substrate, a plura...
VERTICAL DOUBLE DIFFUSED MOSFET