Thus, does not reduce the original property of L-DMOSFET, and can be realized without increasing the element area antistatic high breakdown voltage.滨泽靖史CN1433083A Jan 16, 2003 Jul 30, 2003 罗姆股份有限公司 Double-diffused MOSFET and semiconductor device...
DOUBLE DIFFUSED MOSFET 专利名称:DOUBLE DIFFUSED MOSFET 发明人:NAGAYASU YOSHIHIKO,TADA HAJIME,TSUCHIYA KAZUHIRO 申请号:JP30361388 申请日:19881130 公开号:JPH02150068A 公开日:19900608 专利内容由知识产权出版社提供 摘要:PURPOSE:To form a double diffused MOSFET having characteristics of high breakdown ...
Double diffused mosfet 优质文献 相似文献 参考文献 引证文献Lateral double-diffused mosfet A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, ...
Double diffused mosfet with potential biases 来自 掌桥科研 喜欢 0 阅读量: 27 公开/公告号: US4884116 A 公开/公告日期: 1989年11月28日 发明人: K Shirai 被引量: 20 摘要: First and second single crystal silicon substrates are integrated, by means of a thermal treatment, with first and second...
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumul...
Double-diffused-drain MOS device with floating non 优质文献 相似文献 参考文献 引证文献A theoretical study of gate/Drain offset in LDD MOSFET's This should be considered when comparing the double-diffused and spacer LDD structures. It is shown that gate/drain offset can cause the rise of channel...
A double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device comprising an insulating layer having an opening on the top surface of a semiconductor wafer, channel regions and well regions and source regions formed through two stage deffusions of impurity materials respectively of...
We propose a new method to extract the effective channel length for a double-diffused MOSFET (DMOSFET). This method models the DMOSFET by using two MOSFETs serially connected to each other. The effective channel lengths for these two MOSFETs are extracted from the single relation between the ef...
利用0.15μm标准CMOS工艺制造出了工作电压为30V的双扩散漏端MOS晶体管(double diffused drain MOS, DDDMOS).观察到DDDMOS的衬底电流-栅压曲线(Ib-Vg曲线)有两个峰.通过实验和TCAD模拟揭示了DDDMOS衬底电流的形成机理,发现衬底电流第一个峰的成因与传统MOS器件相同;第二个峰来自于发生在漂移区远离沟道一侧高场区的...
TRENCH MOSFET WITH DOUBLE-DIFFUSED BODY PROFILE 专利名称:TRENCH MOSFET WITH DOUBLE-DIFFUSED BODY PROFILE 发明人:HSHIEH, Fwu-Iuan,SO, Koon, Chong 申请号:EP01944581.6 申请日:20010614 公开号:EP1292990B1 公开日:20090916 专利内容由知识产权出版社提供 摘要:A trench MOSFET device and process for...