Thus, does not reduce the original property of L-DMOSFET, and can be realized without increasing the element area antistatic high breakdown voltage.滨泽靖史CN1433083A Jan 16, 2003 Jul 30, 2003 罗姆股份有限公司 Double-diffused MOSFET and semiconductor device...
Lateral double-diffused mosfet A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings for... M Hoshi,T Mihara - ...
Double diffused mosfet with potential biases 来自 掌桥科研 喜欢 0 阅读量: 31 公开/公告号: US4884116 A 公开/公告日期: 1989年11月28日 发明人: K Shirai 被引量: 20 摘要: First and second single crystal silicon substrates are integrated, by means of a thermal treatment, with first and second...
专利名称：Dual gate lateral double-diffused MOSFET (LDMOS) transistor 发明人：Marco A. Zuniga,Budong You 申请号：US12174471 申请日：20080716 公开号：US08390057B1 公开日：20130305 专利内容由知识产权出版社提供 专利附图：摘要：Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS)...
(Lateral Double-Diffused MOSFET)、垂直导电双扩散型场效应晶体管(Planar MOSFET),沟槽型场效应晶体管(Trench MOSFET),超结结构场效应晶体管(Super Junction MOSFET),浮岛结构场效应晶体管等。 2023-06-05 15:12:10 维安SGT MOSFET的三大优势介绍 MOSFET大致可以分为以下几类:平面型MOSFET;Trench (沟槽型)MOSFET...
My account Sign in Novel lateral double-diffused MOSFET with folded silicon and high-permittivity dielectric breaking silicon limit Superlattices and Microstructures Volume 123,November 2018, Pages 280-285 Purchase options CorporateFor R&D professionals working in corporate organizations. ...
Laterally double-diffused metal oxide semiconductor field effect transistor (LDMOSFET)Power MOSFETSilicon on insulator (SOI)The charge plasma (CP) concept is... A Bansal,MJ Kumar - 《Current Applied Physics》 被引量: 1发表: 2015年 Investigation of laterally single-diffused metal oxide semiconductor...
The N-type semiconductor substrate 1 makes a drain region, the polysilicon film 4 making a gate electrode, an N<Sup>+</Sup> diffused layer 15 making a source, the substrate 1 making a drain, and a wiring metal 19 makes a source electrode. Therefore, after an opening is provided in ...
Double silicon drift layers are used to reduce the specific on-resistance (Ron,sp) for a trench-gate-integrated lateral double-diffused MOSFET (DDL TG LDMOS) based on SOI technology in this paper. A trench-gate is incorporated into the oxide trench, a n-type drift layer with a high ...
Anovelsuper-junctionlateraldouble-difusedmetal—oXide--semiconductor6eldefecttransistor《sJ—LDMosFET、 withn—typestepdopingbuferlayerisproposed.Thestepdopingbuferlayeralmostcompletelyeliminatesthe substrate-assisteddepletionefect,modulateslateralelectric五eldandachievesnearlyuniformsurface五eld . On theotherhand,...