PURPOSE:To reduce ON resistance by increasing a channel width per unit area of a power semiconductor device consisting of a vertical double-diffused MOSFET. CONSTITUTION:The title item is provided with a plurality of first opening windows 143 and a gate electrode 104a with a second opening window...
VERTICAL DOUBLE DIFFUSED MOSFET
Superior performance in double-diffused MOSFET by multi-trench gate structure: physical investigation and design The Double-diffused Metal-Oxide-Semiconductor (D-MOSFET) is the first Power MOSFET structure to be widely used across an extensive range of power levels. T... AS Shoormasti,A Abbasi,AA...
AcronymDefinition VDMOS Vertical Double Diffused Mos VDMOS Vertical Diffusion Metal-Oxide Semiconductor (MOSFET technology) Copyright 1988-2018 AcronymFinder.com, All rights reserved. Suggest new definitionWant to thank TFD for its existence? Tell a friend about us, add a link to this page, or visi...
Efficiency, reliability, and cost are the important design considerations of a vertical double diffused MOSFET (VDMOS) because of its high-voltage applicat... KH Wong - 《Microelectronics Reliability》 被引量: 1发表: 2011年 Super junction high-voltage power device structure The super junction high...
To obtain thermal contact resistance (TCR) between the vertical double-diffused metal-oxide-semiconductor (VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat ...
A new approach to improve the high-voltage vertical double diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky c... HM Chuang,KB Thei,SF Tsai,... - 《IEEE Transactions on Electron Devices》 被引量: 25发表: 2003年 A high-voltage SOI MOSFET wi...
reverserecoverytimeandreverserecoverychargeareabout50.80and4O%ofthoseofthesupe~unctionMOSFET.respectively.Keywords:inhomogeneousfloatingdiodereverserecoveryPACS:85.30.Tv.85.30.De1.Introductionislands,specificon—stateresistance,breakdownvoltage,bodyPowermetal-oxide—semiconductorfleld-efcttransistors(MOSFETs)arewidely...
The improved DMOS power transistor () provides a more favorable trade-off between threshold voltage (V) ... SL Merchant - US 被引量: 19发表: 2004年 Investigation of a 450 V rating silicon-on-insulator lateral-double-diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-...
[2] 2. This invention relates to a vertical double diffused MOSFET and method for manufacturing same, and more particularly to a vertical double diffused MOSFET manufactured through a self-aligned process which is applicable for switching power sources, AC adapters, battery chargers, motor control ...