The ions are thermally diffused into the substrate to form a source diffusion region. An Independent claim is also included for the process of manufacturing the MOSFET.KITO, TAKAYUKI
VERTICAL DOUBLE DIFFUSED MOSFET
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumul...
AcronymDefinition VDMOS Vertical Double Diffused Mos VDMOS Vertical Diffusion Metal-Oxide Semiconductor (MOSFET technology) Copyright 1988-2018 AcronymFinder.com, All rights reserved. Suggest new definitionWant to thank TFD for its existence? Tell a friend about us, add a link to this page, or visi...
Anovelplanarverticaldouble46diffusedmetal-oxidesemiconductorfield-effecttransistorwithinhomogeneous Chin.Phys.BVo1.20,No.12(2011)128501Anovelplanarverticaldouble..difusedmeta1..oxide..semiconductorfield..e●1lnnomogeneouscttransistorwithfloatingislands木RenMin(任敏)t,LiZe—Hong(李泽宏),LiuXiao—Long(刘小龙),...
Temperature-Dependent Characteristics of Polysilicon and Diffused Resistors. A new approach to improve the high-voltage vertical double diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky c... HM Chuang,KB Thei,SF Tsai,... - 《IEEE Transactions on Ele...
Efficiency, reliability, and cost are the important design considerations of a vertical double diffused MOSFET (VDMOS) because of its high-voltage applicat... KH Wong - 《Microelectronics Reliability》 被引量: 1发表: 2011年 Super junction high-voltage power device structure The super junction high...
To obtain thermal contact resistance (TCR) between the vertical double-diffused metal-oxide-semiconductor (VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat ...
Double-diffused MOS (DMOS) power transistor with a channel compensating implant An improved DMOS power transistor () with a single p-body implant () and including an n-type channel compensating implant (NCCI) (). The improved DMOS power transistor () provides a more favorable trade-off between...
Disclosed are an improved vertical-type double diffused MOSFET which has a self-aligned gate structure and field oxide film and a method of fabricating the same. A silicon nitride film is selectively formed and a well region is formed, after which a self-aligned field oxide film is formed on...