Accordingly, the capacitance between the gate electrode and the drain electrode becomes remarkably small in value, is operated at a high speed, and its loss is small.SERATA TAKUJISAKAI TATSUROYANAI TOSHIAKI
JFET效应vertical double-diffused MOSFETparameter extractionsub-circuit modelJFET effect从VDMOS的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型... 赖柯吉,张莉,田立林 - 《半导体学报》 被引量: 5发表: 2002年 Novel power VDMOSFET structure with vertical floating islands and trench gate ...
islands MOSFET (FLIMOS),in which fl oating is— lan ds are placed int o t he drift region ,h as b een pro— posed t o red uc e on ·-st at e resist an ce wit hou t degrad—- ing breakdown voltage.【一。] The additional PN junc— tions,formed by buried P—type fl...
A vertical power MOSFET, which could be a trench-gated or planar double-diffused device, includes an N+ substrate and an overlying N-epitaxial layer. An N-type buried layer is formed in the epitaxial layer and overlaps the substrate, the buried layer having a dopant concentration which is gr...
功率器件可分为两类: 一类是以功率二极管、晶闸管、绝缘双极型晶体管为主的双功率半导体器件; 另一类是以垂直双扩散金属氧化物半导体(vertical double-diffused metal-oxide-semiconductor, VDMOS)为代表的功率金属氧化物半导体(metal oxide semiconductor, MOS)器件为主的单极功率半导体器件. 自1958年以来, 硅基金属氧化...
Current distribution in vertical double-diffused MOS (DMOS) transistors of a Smart Power Technology are investigated under high current, short duration ope... M Blaho,D Pogany,E Gornik,... - 《Microelectronics Reliability》 被引量: 3发表: 2003年 Advanced BCD technology with vertical DMOS based ...
垂直双扩散MOSFET 1. Vertical Double-diffused MOSFET(VDMOSFET) is a main type among current Power MOSFET’s. 垂直双扩散MOSFET(VDMOSFET)是当今功率MOSFET的一种主要类型,其开关性能在应用中是非常重要的,主要取决于栅极和源极间的等效电阻Rg(简称栅电阻Rg)和输入电容Ciss的乘积。 更多例句>> 4) vertical...
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky c... C Xu,Sin, J.K.O,B Kang,... - 《IEEE Transactions on Electron Devices》 被引量: 98发表: 2003年 Temperature-Dependent Characteris...
Disclosed are an improved vertical-type double diffused MOSFET which has a self-aligned gate structure and field oxide film and a method of fabricating the same. A silicon nitride film is selectively formed and a well region is formed, after which a self-aligned field oxide film is formed on...
功率纵向双扩散MOSFET 1. Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Power Vertical Double Diffused MOSFET; 双极晶体管导通状态对功率纵向双扩散MOSFET静态电流-电压特性的影响6) MOSFET-gate dielectric MOSFET栅介质 1. The new research of MOSFET-gate dielectric was summari...