A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described.Budong You...
LDMOS,全称为Lateral Double-diffused Metal Oxide Semiconductor(侧向双扩散金属氧化物半导体),是一种特殊类型的MOSFET(金属氧化物半导体 2024-08-23 14:03:04 一种适用于RFIC的抗击穿LDMOS设计 LDMOS (Lateral Diffused MetalOxide Semiconductor Transistor,横向扩散金属氧化物半导体)以其高功率增益、高效率及低成本等...
A New Structure for Lateral Double Diffused MOSFET to Control the Breakdown Voltage and the On-Resistance Lateral Double Diffused Metal Oxide Field Effect Transistor (LDMOS) are widely used in power applications for the high breakdown voltage. However, the devi... M Zareiee - 《Silicon》 被引量...
A new super-junction lateral double diffused MOSFET (LDMOST) structure is designed with n-type charge compensation layer embedded in the p?-substrate near ... Duan,Bao-Xing,Zhang,... - 《Chinese Physics》 被引量: 9发表: 2007年 Super Junction Lateral Double-Diffused MOSFET with Ultra-low ...
(Received23August2007)Anovelsuper-junctionlateraldouble-difusedmetal—oXide--semiconductor6eldefecttransistor《sJ—LDMosFET、withn—typestepdopingbuferlayerisproposed.Thestepdopingbuferlayeralmostcompletelyeliminatesthesubstrate-assisteddepletionefect,modulateslateralelectric五eldandachievesnearlyuniformsurface五eld.On...
An ultralow specific on-resistance ($R_{{rm on, sp}}$) integrable silicon-on-insulator (SOI) power lateral MOSFET is proposed. The MOSFET features double trenches: an oxide trench in the drift region and a trench gate extended to the buried oxide (BOX) (SOI DT MOSFET). First, the ox...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以... 劉文森,呂志鵬,Liu, WenSen,... 被引量: 0发表: 2016年 加载更多研究点推荐 lateral diffusion metal oxide semiconductor (LDMOS) Lateral diffu...
A method for forming a lateral superjunction MOSFET device includes forming a semiconductor body including a lateral superjunction structure and a first co... M Bobde,L Guan,K Padmanabhan,... 被引量: 0发表: 2019年 SJ/RESURF LDMOST A monolithic lateral double diffused MOSFET (LDMOST) based...
高压LDMOS(Lateral Double-diffused MOSFET)是高压集成电路HVIC(High Voltage Integrated Circuit)和功率集成电路PIC(Power Integrated Circuit)的关键技术。为了与低... 段宝兴 - 电子科技大学 被引量: 11发表: 2007年 A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Tr...