A lateral double-diffused MOS transistor includes: a semiconductor substrate of a first conductivity type; an epitaxial layer of a first conductivity type provided on the semiconductor substrate; a drain region provided in the center region of the upper surface part of the epitaxial layer and ...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以形成具有高壓功能的積體電路(High Voltage Integrated Circuits, HVIC)和智能電源管理積體電路(Smart Power Management Integrated Circuits, SPMIC),故已逐漸...
Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate incl
A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transi... S Gene,TJ Ruey - IEEE 被引量: 0发表: 0年 Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Tran...
A lateral double-diffused metal oxide semiconductor (LDMOS) device is disclosed. The LDMOS device comprises a gate region and a body region under the gate region. The LDMOS device includes an enhanced drift region under the gate region. The enhanced drift region touches the body region. By desi...
An electrostatic discharge (ESD) protection design for smart power applications with lateral double-diffused MOS (LDMOS) transistors is investigated. With the gate-driven and substrate-triggered circuit techniques, the n-channel LDMOS can be quickly turned on to protect the output drivers during an ...
In this paper, the electrical parameter degradations for the n-type lateral double-diffused MOS (nLDMOS) with thin gate oxide and the p-type lateral double-diffused MOS (pLDMOS) with thick gate oxide under the OFF-state inrush current stress have been investigated experimentally. During the ...
enhanced diffusion-drift equationLDMOS deviceA new device,dual material gate(DMG)lateral double diffused metal oxide semiconductor(LDMOS)was presented,which ... HU Yuan,YH Dai,JN Chen,... - 《Journal of University of Science & Technology of China》 被引量: 1发表: 2007年 加载更多研究...
The reduced-surface-field-type lateral double-diffused MOS (LDMOS) structure, which is the key element used in the power device of the bipolar-CMOS-DMOS (BCD) process, was optimized for a wide voltage range of 20–60 V class in the 0.18 ... YO Choi,SY Kim - 《Semiconductor Science &...