Lateral double-diffused MOS transistor deviceUS20050139858 Dec 29, 2004 Jun 30, 2005 Sung Woong J. Lateral double-diffused MOS transistor deviceUS20050139858 * 2004年12月29日 2005年6月30日 Sung Woong J. Lateral double-diffused MOS transistor device...
Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit A new superjunction lateral double-diffused MOS wi Duan,Baoxing,Yuan,... - 《IEEE Electron Device Letters》 被引量: 2发表: 2015年 Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specif...
A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transi... S Gene,TJ Ruey - IEEE 被引量: 0发表: 0年 Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Tran...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
1.A lateral double-diffused MOS (LDMOS) transistor comprising:a semiconductor substrate formed of a material having first conductivity type impurities;a drift region formed of a material having second conductivity type impurities on the semiconductor substrate;a first buried layer formed of a material ...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以形成具有高壓功能的積體電路(High Voltage Integrated Circuits, HVIC)和智能電源管理積體電路(Smart Power Management Integrated Circuits, SPMIC),故已逐漸...
A novel Lateral Double-diffused MOS (LDMOS) with an H-shape shallow-trench-isolation (STI) structure is experimentally proposed in this brief. The H-shaped... S Liu,R Ye,W Sun,... - 《IEEE Transactions on Electron Devices》 被引量: 0发表: 2018年 120V Low Side LDMOS Device with Sided...
In this paper, the electrical parameter degradations for the n-type lateral double-diffused MOS (nLDMOS) with thin gate oxide and the p-type lateral double-diffused MOS (pLDMOS) with thick gate oxide under the OFF-state inrush current stress have been investigated experimentally. During the ...
Provided are a Lateral Double-diffused MOS (LDMOS) device and a method for manufacturing same. A LOMOS device comprising a substrate (10), a drift region (20) located on the substrate (10), a source zone (201) and a drain zone (220) prov... G Zhang,S Zhang,X Hu 被引量: 0发表...
BCD製程之SOI-LDMOS製程與元件模擬Process and Device Simulation of Silicon-on-Insulator Lateral-Diffusion MOS in Bipolar-CMOS-DMOS Technology 在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以... 劉...