A lateral double diffused MOS transistor includes a drain region positioned in a central region of an upper surface portion of an epitaxial layer, the drain region including a first well of a second conductive type, a source region positioned in the upper surface portion of the epitaxial layer ...
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (... Q Li,WD Wang,Y Liu,... - 《中国物理快报(英文版)》 被引量: 2发表: 2012年 A Low-Cost 900V Rated Multiple RESURF LDMOS Ul...
1.A lateral double-diffused MOS (LDMOS) transistor comprising:a semiconductor substrate formed of a material having first conductivity type impurities;a drift region formed of a material having second conductivity type impurities on the semiconductor substrate;a first buried layer formed of a material ...
A lateral double-diffused metal oxide semiconductor (LDMOS) device is disclosed. The LDMOS device comprises a gate region and a body region under the gate region. The LDMOS device includes an enhanced drift region under the gate region. The enhanced drift region touches the body region. By desi...
A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以形成具有高壓功能的積體電路(High Voltage Integrated Circuits, HVIC)和智能電源管理積體電路(Smart Power Management Integrated Circuits, SPMIC),故已逐漸...
Optimization of lateral double-diffused MOS transistors in 0.18 m bipolar-CMOS-DMOS technology for wide-voltage applications The reduced-surface-field-type lateral double-diffused MOS (LDMOS) structure, which is the key element used in the power device of the bipolar-CMOS-DMOS (BCD) process, was...
Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (... 李琦,王卫东,刘云,....