An lateral-diffused MOS (LDMOS) is often used to as the ESD device in a high-voltage circuit for its low on-resistance benefit. But, it has several serious disadvantages, including the V h value is not high enough and the device in a multi-finger structure can't completely turn on ...
A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type...
LATERAL-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 发明人: Chen Ming-Shing;Wu Wei-Ting;Chang Ming-Hui;Ning Chao-Chun 申请人: 申请日期: 2013-11-05 申请公布日期: 2015-05-07 代理机构: 代理人: 地址: Hsin-Chu City TW 摘要: A lateral-diffused metal oxide semic...
高压LDMOS(Lateral Double-diffused MOSFET)是高压集成电路HVIC(High Voltage Integrated Circuit)和功率集成电路PIC(Power Integrated Circuit)的关键技术。为了与低... 段宝兴 - 电子科技大学 被引量: 11发表: 2007年 A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Tr...
申请(专利权)人: 发明人: F Hebert 国省代号: WO 被引量: 2 摘要: A lateral diffused MOS transistor formed in an epitaxial layer includes a trench source contact (30). A method of making the transistor is also described, including an etch step for the trench.收藏...
A lateral diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof are provided. A deep well region is disposed in a substrate. An isolation structure is disposed in the substrate to define a first active area and a second active area. A well region is disposed ...
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
A lateral double-diffused metal oxide semiconductor is disclosed. An example LDMOS transistor includes a semiconductor substrate of a first conductivity type, a first buried layer of a second conductivity type on the semiconductor substrate, an epitaxial layer of the second conductivity type on the fi...
LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR 专利名称：LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR 发明人：Kwang-Ming Lin,Ming-Cheng Lin,Yu-Long Chang 申请号：US12609813 申请日：20091030 公开号：US20110101453A1 公开日：20110505 专利内容由知识产权出版社提供 专利附图：摘要：The invention ...
A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask...