Can change any of the semiconductor wafer process technology to monitor add-doped layer in the horizontal direction of the steepness of the distribution, as another additional step of wafer process technology. 在具体实施例之一中,包括一个或多个掺添区的取样结构形成在制造晶片(例如,同时和一个或多个...
A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type...
LATERAL-DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 发明人: Chen Ming-Shing;Wu Wei-Ting;Chang Ming-Hui;Ning Chao-Chun 申请人: 申请日期: 2013-11-05 申请公布日期: 2015-05-07 代理机构: 代理人: 地址: Hsin-Chu City TW 摘要: A lateral-diffused metal oxide semic...
A lateral diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof are provided. A deep well region is disposed in a substrate. An isolation structure is disposed in the substrate to define a first active area and a second active area. A well region is disposed ...
The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the substrate, neighboring with a first side...
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
A lateral double-diffused metal oxide semiconductor is disclosed. An example LDMOS transistor includes a semiconductor substrate of a first conductivity type, a first buried layer of a second conductivity type on the semiconductor substrate, an epitaxial layer of the second conductivity type on the fi...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer An ultra-low specific on-resistance (Ron,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-bur....
Hot carrier-induced device degradation in n-type lateral diffused MOSFETs with mobile charges in gate oxide has been studied. Abnormal decrease-then-increase in Vduring hot-carrier stress was observed. The decrease was found to be caused by movement of mobile charges while the increase was the...