An lateral-diffused MOS (LDMOS) is often used to as the ESD device in a high-voltage circuit for its low on-resistance benefit. But, it has several serious disadvantages, including the V h value is not high enough and the device in a multi-finger structure can't completely turn on ...
申请(专利权)人: 发明人: F Hebert 国省代号: WO 被引量: 2 摘要: A lateral diffused MOS transistor formed in an epitaxial layer includes a trench source contact (30). A method of making the transistor is also described, including an etch step for the trench.收藏...
A new superjunction lateral double-diffused MOS wi Duan,Baoxing,Yuan,... - 《IEEE Electron Device Letters》 被引量: 2发表: 2015年 Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect In this paper, a novel ...
A lateral double diffused MOS transistor including a substrate, a source region and a drain region disposed in the substrate, a first contact and a second contact connected to the source region and the drain region, respectively, a gate insulation layer and a gate electrode on the substrate, ...
The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a ...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
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A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask...
The safe operating area of a high-voltage MOSFET, such as a lateral double-diffused MOS (LDMOS) transistor, is increased by using transistor cells with an X-shaped body contact region and four smaller source regions that adjoin the body ... A Strachan,D Brisbin - US 被引量: 57发表: 200...