Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain ...
LATERAL DOUBLE-DIFFUSED TRANSISTOR AND MANUFACTURING METHOD THEREOF 发明人: Yang LU;Guangtao HAN;WEIWEI Ge 申请人: Joulwatt Technology (Hangzhou) Co Ltd 申请日期: 2020-10-30 申请公布日期: 2021-06-10 代理机构: 代理人: 地址: Hangzhou CN 摘要: The present disclosure relates to a lateral dou...
A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type body region, an N-type well, an isolation oxide region, a drift oxide region, a gate, an N-type contact region, a P-type contact region...
Lateral double diffused MOS transistor 发明人: NISHIBE EIJI;KIKUCHI SHUICHI;MARUYAMA TAKAO 申请人: 申请日期: 2002-01-04 申请公布日期: 2003-05-06 代理机构: 代理人: 地址: 摘要: To increase the withstand voltage and reduce ON-state resistance, a semiconductor device provided with a gate el...
(Received23August2007)Anovelsuper-junctionlateraldouble-difusedmetal—oXide--semiconductor6eldefecttransistor《sJ—LDMosFET、withn—typestepdopingbuferlayerisproposed.Thestepdopingbuferlayeralmostcompletelyeliminatesthesubstrate-assisteddepletionefect,modulateslateralelectric五eldandachievesnearlyuniformsurface五eld.On...
在近代半導體元件與製程的研究與發展中,橫向雙擴散金屬氧化物半導體(Lateral Double-Diffused Metal-Oxide-Semiconductor, LDMOS)由於易於與低電壓的積體電路集成,以形成具有高壓功能的積體電路(High Voltage Integrated Circuits, HVIC)和智能電源管理積體電路(Smart Power Management Integrated Circuits, SPMIC),故已逐漸...
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral...
The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a ...
A lateral double-diffused metal oxide semiconductor is disclosed. An example LDMOS transistor includes a semiconductor substrate of a first conductivity type, a first buried layer of a second conductivity type on the semiconductor substrate, an epitaxial layer of the second conductivity type on the fi...