Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described.Budong You...
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region ...
A method for manufacturing a lateral double diffused metal oxide semiconductor (LDMOS) device includes forming an oxide layer on a semiconductor substrate, forming first and second trenches by partially etching the oxide layer and the semiconductor substrate, forming a small trench overlapping with the...
A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type body region, an N-type well, an isolation oxide region, a drift oxide region, a gate, an N-type contact region, a P-type contact region...
A lateral double-diffused metal oxide semiconductor is disclosed. An example LDMOS transistor includes a semiconductor substrate of a first conductivity type, a first buried layer of a second conductivity type on the semiconductor substrate, an epitaxial layer of the second conductivity type on the fi...
A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask...
摘要: PROBLEM TO BE SOLVED: To provide a lateral double-diffused MOS transistor with high withstand voltage and low on-resistance characteristics.收藏 引用 批量引用 报错 分享 文库来源 其他来源 求助全文 LATERAL DOUBLE-DIFFUSED MOS TRANSISTOR, ITS MANUFA 优质文献 ...
本发明提出一种横向双扩散金属氧化物半导体(lateral double diffused metal oxide semiconductor,LDMOS)元件及其制造方法.其中,LDMOS元件包含:P型基板,外延层,P型高压阱,P型本体区,N型阱,隔绝氧化区,漂移氧化区,栅极,N型接点区,P型接点区,上源极,下源极,以... 黄宗义 被引量: 0发表: 2019年 加载更多研究...
(Received23August2007) Anovelsuper-junctionlateraldouble-difusedmetal—oXide--semiconductor6eldefecttransistor《sJ—LDMosFET、 withn—typestepdopingbuferlayerisproposed.Thestepdopingbuferlayeralmostcompletelyeliminatesthe substrate-assisteddepletionefect,modulateslateralelectric五eldandachievesnearlyuniformsurface五...
A novel low specific on-resistance(Ron,sp) lateral double-diffused metal oxide semiconductor(LDMOS) with a buried improved super-junction(BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations....