Study of Band gap of doped silicon nanocrystalShirish JoshiSana KausarGurpreet SinghInternet Scientific Publications
Slotboom and De Graaff's empirical formula: ΔE g = E 1 ln frsol| N/ N 0 + ( ln frsol| N/ N 0) 2 + C{ su frsol|1/2 for the band gap narrowing in silicon for dopant concentration, N, below 2 × 10 su19 cm 3 has been derived from the known theoretical results. Calcul...
Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electro
The results showed the emergence of band tails which penetrated deeply into the energy gap and accounted for the band-gap narrowing observed in such a diode by analysis of capacitance vs voltage measurements of the built-in voltage. 关键词: Theoretical or Mathematical/ energy gap heavily doped ...
J. R. Lowney, "Band-gap narrowing in the space-charge region of heavily doped silicon diodes," Solid State Electron., vol. 28, pp. 187-191, 1985.Band-gap narrowing in the space-charge region of heavily doped silicon diodes - Lowney - 1985...
S E Aw,H S Tan,C K Ong.Optical absorption measurements of band-gap shrinkage in moderately and heavily doped silicon. Journal of Physics:Condensed Matter 3 . 1991Optical absorption measurements of band-gap shrinkage in moderately and heavily doped silicon. S E Aw,H S Tan,C K Ong. Journal...
摘要: In this work, we address the effects of molecular doping on the electronic properties of fluorinated and chlorinated silicon nanowires (SiNWs), in comparison with those corresponding to hydrogen-passi关键词: Density functional theory Halogens Molecular doping Silicon nanowires ...
Carbon doped silicon oxide SiO(C, H) lowkthin films(k2.9)deposited by the plasma enhanced chemical vapor deposition technique from trimethylsilane (3MS) an... MR Wang,Rusli,,JL Xie,... - 《Journal of Applied Physics》 被引量: 24发表: 2004年 Effect of Tm–Er concentration ratio on t...
The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectr...
The direct band gap values in the range of 0.658鈥 1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon... Q Wei,W Tong,B Wei,... - 《Physical Chemistry Chemical Physics》 被引量: ...