Harris C, O’Reilly EP (2006) Nature of the band gap of silicon and germanium nanowires. Physica E 32:341–345C. Harris and E.P. O'Reilly, Nature of the band gap of silicon and germanium nanowires. Physica E: Low-Dimensional Systems and Nanostructures, 2006. 32(1-2 SPEC. ISS.): ...
Band gap, in solid-state physics, a range of energy levels within a given crystal that are impossible for an electron to possess. Generally, a material will have several band gaps throughout its band structure (the continuum of allowed and forbidden elec
Two- and one-dimensional honeycomb structures of silicon and germanium. Phys. Rev. Lett. 102, 236804 (2009). CAS ADS PubMed Google Scholar Guzmán-Verri, G. G. & Lew Yan Voon, L. C. Electronic structure of silicon-based nanostructures. Phys. Rev. B 76, 075131 (2007). ADS Google ...
Examples of indirect band gap semiconductor materials are silicon (Si), germanium (Ge), aluminum arsenide (AlAs) and gallium phosphide (GaP). Because of the reduced absorption coefficients, silicon layers in photodiodes and photovoltaic cells, for example, need to be substantially thicker – often ...
Silicon, because of its high stability and abundance, has been widely used as a photovoltaic material for solar cell devices. However, crystalline silicon does not absorb sunlight as efficiently as some other materials do. Its indirect band gap of 1.1 eV2 significantly limits the efficiency ...
band gap (particularly for 1B2L) may be an artifact, originating from an ellipsometry fitting procedure. The extrapolation lines (dashed lines) indicate optical band gaps (Eg) of ∼3.55, ∼3.30, and ∼2.65eV for BiT, 1B1L, and 1B2L, respectively. The decreased band gap is mainly ...
The ultrathin body (UTB) silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) is promising for sub-50-nmcomplementary metal-oxide semiconductor technologies. To explore a high-mobility channel for this technology, this paper presents an examination of Si and Ge hole sub-...
Presents a study that examined valence band structures in silicon (Si) and germanium (Ge). Limitations of previous studies on valence band structures in S... Y.,Jain,S.,... - 《Journal of Applied Physics》 被引量: 0发表: 1993年 Calculation of critical layer thickness versus lattice mismat...
Direct band gap luminescence from Ge on Si pin diodes Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electro... E Kasper,M Oehme,J Werner,... - 《Frontiers of Optoelectronics in China》 被...
Tailoring the band gap of solar cells made of liquid silane by adding germanium The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e....