This model assumes the standard Schottky picture of interface band alignment, but that the interface phases involved are not the pure metal or oxide normally assumed by other models. For both III￢ and II￢I compounds, the barrier height to gold is found to correlate well with the anion work...
This model assumes the standard Schottky picture of interface band alignment, but that the interface phases involved are not the pure metal or oxide normally assumed by other models. For both III-V and II-VI compounds, the barrier height to gold is found to correlate well with the anion ...
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide We investigated Schottky barrier diodes of several metals (Ti, Ni, and Au) having different metal work functions to p-type 4HSiC (0001) using I–V and C–V... SK Lee,CM Zetterling,M ?Stling -...
We present a field-effect solar cell using graphene to form a tunable junction barrier with an Earth-abundant and low cost zinc phosphide (Zn3P2) thin... O Vazquez-Mena,JP Bosco,O Ergen,... - 《Nano Letters》 被引量: 15发表: 2014年 Structure of Zn3P2 The structure of Z n3 P 2...
Liu, Y. Y., Stradins, P. & Wei, S. H. Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier.Sci. Adv.2, 1600069 (2016). Google Scholar Thomson, G. W. The Antoine equation for vapor-pressure data.Chem. Rev.38, 1–39 (194...
]. The role of surface termination has also been reported in terms of their contribution for producing the Schottky-barrier-free contacts with 2D semiconductors [246]. View article Work Function of Metals A. Kiejna, in Encyclopedia of Interfacial Chemistry, 2018 The Definition of Work Function ...
3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications....
Investigated a self-aligned double pocket charge plasma Schottky barrier tunnel FET (CP-SB-TFET).It employs induced charge plasma instead of the actual doping.It synergistically leverages gate modulated schottky barrier tunneling and induced electron plasma formation.It offers high immunity towards process...
As a result, effective potential profiles and the Schottky barrier heights were calculated. 展开 关键词: METAL NANOFILM WORK FUNCTION DIELECTRIC SURFACE ENERGY SCHOTTKY BARRIER HEIGHT DOI: 10.15588/1607-3274-2013-1-1 年份: 2013 收藏 引用 批量引用 报错 分享 ...
This choice follows from a prior estimation based on the Schottky-Mott rule51–53, which states that the potential barrier height at the interface is given by the energy difference between the semiconductor electron affinity and the metal work function. Because the electron affinity of as 4.0 ...