(b), respectively. An additional effect is image force lowering of the barrier when electrons approach the metal, due to the electrostatic boundary conditions at the interface. The barrier is rounded off as show
Thermionic emission theory for Schottky contacts, including the Schottky effect (image force lowering), is successfully used to explain the form of the gate leakage current as a function of gate voltage (I(Vg)) at room temperature. A value for the unlowered Schottky barrier height is extracted...
12 October 2015 Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light Ming-Yen Lu1,2, Ming-Pei Lu3, Shuen-Jium You1, Chieh-Wei Chen1 & Ying-Jhe Wang1 In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO...
Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETsElectrical and electronic engineeringNanoscale devicesNanoscale materialsUltra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by ...
12 October 2015 Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light Ming-Yen Lu1,2, Ming-Pei Lu3, Shuen-Jium You1, Chieh-Wei Chen1 & Ying-Jhe Wang1 In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO...
The electrical and photovoltaic properties of In/trans-(CH)x/Electrodag +502 sandwich cells have been examined. The forward bias dark current obeys a modified Shockley equation. The junction reverse bias current fits the image-force lowering relationship. The capacitance-voltage characteristics were ...
The high values of ideality factor and barrier height have been attributed to interfacial layer (PVA), the image force lowering BH and particular distribution of interface states at M/S interface [17], [18], [42]. Recently, the nature and origin of the increase in the ΦB0 and a ...
The barrier heights of ideal Schottky contacts depend on the applied voltage due to the image-force lowering only and their ideally factors nif are approximately 1.01. By extrapolation of our experimental data to n = 1.01, we obtain barrier heights of 0.82 eV and 0.73 eV for uniform Ag- and...
1 as what may happen in the TMBS, the highest barrier Schottky contact achievable within the trenches limits the application of TSBS for high voltage rating SiC devices because of the barrier lowering effect caused by image force when a high electric field crowded around the trench corners. ...
The potential near the interface is determined by the surface field of the SBD and the image force potential experienced by a hole leaving the PtSi film. The superposition of these two effects results in the barrier lowering of the Schottky emission, which is given by equation (5) following....