barrier height variation. metal work functionMeasurements have been made of the electrical characteristics of Schottky barriers made by evaporating films of various metals (Al, Pb, Ni, Au, Ag, Cu) onto p-type silicon. The barriers were generally lower than on n-type silicon, and in the case...
Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic We have demonstrated the fabrication process for a lateral p-type Schottky barrier diode (SBD) with the annealed Mg ohmic contact layer on a MOVPE-grown p-... S Lu,...
The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n - and p -type Si-terminated 6 H − SiC has been measured in the temperature range 150–500 K. It is found that the barrier height to n -type 6 H − SiC does not exhibit a temperature dependence,...
seen that theSchottky barrier height(SBH) for Mn/p-Si SBD has apressure coefficientof 1.61meV/kbar (16.1meV/GPa). We have reported that the p-type barrier height exhibited a weak pressure dependence, accepting that theFermi levelat the interface do not shift as a function of the pressure...
肖特基势垒(Schottkybarrier) 金属和半导体接触形成半导体表面势垒,此势垒又称肖特基势垒。 这篇肖特基势垒(Schottkybarrier)百科全说物理篇,你推荐给朋友了么? 【肖特基势垒(Schottkybarrier)百科全说物理篇】相关文章: ★卡皮查液化器(Kapitzaliquefier)初中生物理百科 ...
SCHOTTKY BARRIER TYPE SEMICONDUCTOR DEVICE 专利名称：SCHOTTKY BARRIER TYPE SEMICONDUCTOR DEVICE 发明人：TSUDA NAOYUKI 申请号：JP834883 申请日：19830120 公开号：JPS59132661A 公开日：19840730 专利内容由知识产权出版社提供 摘要：PURPOSE:To improve the characteristic of reverse directional withstand voltage and ...
Al/n:GaInP and Al/p:GaInP Schottky diodes have been grown by molecular‐beam epitaxy with and without thin (6 ) interfacial Si layers. The Schottky barrier heights were measured byC‐V,I‐V, andI‐V‐Ttechniques. Then‐ andp‐type barrier heights for the samples without interfacial Si wer...
Schottky barrier height modification (BHM) resulting from 0.5 keV He-ion bombardment of n- and p-GaAs (doping 1016 cm3) is investigated for doses between 5×1010 and 5×1014 cm2. Current–voltage measurements reveal a decrease (0.95–0.63 eV) and an increase (0.63–0.70) in barrier height...
(1939), consists in the formation of a potential barrier that can follow the leveling of theFermi levelswhen two materials are brought into contact. This happens when the semiconductor is n-type and its work function is less than that of metal, or when the semiconductor is p-type its work...
Schottky barrier // Physical encyclopedia (in Russian). V. 5 Ed. by A.M. Prokhorov. — Moscow: Sovetskaja ehnciklopedija, 1988. P. 467. Semiconductor convertors // Nanometr (in Russian), 2009. —www.nanometer.ru/2009/04/08/preobrazovatel_barer_shottki_diod_shottki_153822.html(refere...