barrier height variation. metal work functionMeasurements have been made of the electrical characteristics of Schottky barriers made by evaporating films of various metals (Al, Pb, Ni, Au, Ag, Cu) onto p-type silicon. The barriers were generally lower than on n-type silicon, and in the case...
肖特基势垒(Schottkybarrier) 金属和半导体接触形成半导体表面势垒,此势垒又称肖特基势垒。 这篇肖特基势垒(Schottkybarrier)百科全说物理篇,你推荐给朋友了么? 【肖特基势垒(Schottkybarrier)百科全说物理篇】相关文章: ★冷剂(cryogen)物理初中年级知识 ★射频SQUID(RF(Radiofrequency)SQUID)初中知识物理篇 ...
Measurement of low Schottky barrier heights applied to metallic source/drain MOSFETs model is also performed through measurements and simulations on a long channelp-type Schottky barrier silicon-on-insulator MOSFET with PtSi source/drain. A... E Dubois,G Larrieu - 《Journal of Applied Physics》 ...
Schottky barrier // Physical encyclopedia (in Russian). V. 5 Ed. by A.M. Prokhorov. — Moscow: Sovetskaja ehnciklopedija, 1988. P. 467. Semiconductor convertors // Nanometr (in Russian), 2009. —www.nanometer.ru/2009/04/08/preobrazovatel_barer_shottki_diod_shottki_153822.html(refere...
The Schottky‐barrier height of a Ti‐W alloy of 23 at.% Ti concentration, on bothn‐type andp‐type Si(100), has been measured in the temperature range 17... Aboelfotoh,O M. - 《Journal of Applied Physics》 被引量: 29发表: 1987年 Effects of hydrogen on the barrier height of a...
(1939), consists in the formation of a potential barrier that can follow the leveling of theFermi levelswhen two materials are brought into contact. This happens when the semiconductor is n-type and its work function is less than that of metal, or when the semiconductor is p-type its work...
Referring to FIG. 1, the conventional Schottky barrier gate field effect transistor of the depletion mode type is fabricated by forming a vapor-grown layer 12 of low-resistivity n-type silicon having an impurity density of 1016- 1017cm-3on a high-resistivity p-type silicon substrate 11 of ab...
A high temperature Schottky barrier diode utilizing a refractory metal with a p-type gallium arsenide wafer can be used as a by-pass diode for solar cell arrays. The diode structure can be integrally formed with a solar cell having a high temperative metallized contact grid. Application...
SCHOTTKY BARRIER TYPE DIODE AND ITS MANUFACTURE 来自 百度文库 喜欢 0 阅读量: 23 申请(专利)号: JP特願平4-249389 申请日期: 19920918 公开/公告号: JP特開平6-104424A 公开/公告日期: 19940415 申请(专利权)人: SEIKO INSTR INC セイコー電子工業株式会社 发明人:...
A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metalli