Tung R T. Recent advances in Schottky barrier concepts. Mater Sci Eng, 2001, 35: 1Tung RT. Recent advances in Schottky barrier concepts. Mater Sci Eng R 2001; 35: 1-138.R.T. Tung, Recent advances in Schottky ba
Recent advances in Schottky barrier concepts 热度: Chapter 10 Microbial ecology 热度: The Effect of Climate Change on Microbial Ecology and … 热度: regionofthelake.TheaverageabundanceofMicrocystisspp.washigherinMeiliangBaythaninthelakecenter.
Strain-induced piezoelectric and piezoresistive effect has been found for more than 140 [43] and 80 years [44], respectively, and there are some relatively mature theoretical bases demonstrating new opportunities in 2D materials. The broad basic concepts, commonly used mechanisms and their historical ...
Spin transport in lateral spin valves.aNonlocal spin transport measurement geometries. A current is injected from electrode 3 through the Al2O3barrier into graphene and is extracted at contact 4.bScanning electron micrograph of a four-terminal spin valve with single-layer graphene as spin transport...
Fig. 5. Schematic illustration of the proposed mechanism of Schottky barrier: hydrogen treated Au/TiO2 with three-dimensionally ordered macroporous (3DOM) structure (a) [103], Ag/g-C3N4/TiO2 composite (b) [105]; Ag/TiO2 mixed phase containing Ag° and Ti-Ag-O (c) [106]. Coupling TiO2...
Metal-to-insulator transition (MIT) behaviors accompanied by a rapid reversible phase transition in vanadium dioxide (VO2) have gained substantial attention for investigations into various potential applications and obtaining good materials to study stro
semiconductor, as is evident from Fig.1b. Notably, the contacts formed between wide-bandgap semiconductors and metals are always Schottky. Thus, the contact resistance normally depends on the metal/semiconductor Schottky barrier height (SBH) ΦB. For an n-type semiconductor, it obeys the equation...
advances in the 2D thermoelectric materials field are summarized. Initially, their unique electrical and thermal properties are illustrated. Then, the application of 2D nanomaterials to fabricate bulk thermoelectric compounds, thin-film thermoelectric materials, and composite fillers is discussed in detail....
Shankar K, Basham JI, Allam NK, Varghese OK, Mor GK, Feng X, Paulose M, Seabold JA, Choi K-S, Grimes CA (2009) Recent advances in the use of TiO2nanotube and nanowire arrays for oxidative photoelectrochemistry. J Phys Chem C 113:6327–6359 ...
Due to the ubiquitous Fermi-level pinning effect, the low-resistance contact between metals and lightly-doped n-type c-Si is a technologically challenging issue, which usually results in a relatively high Schottky barrier (>0.65 eV) for electrons. Bullock developed a simple and robust process to...