Bilbro, "The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter," Diamond Relat. Mater. 15, in press (2006).J. R. Smith, R. J. Nemanich, and G. L. Bilbro, "The effect of Schottky barrier lowering and nonplanar ...
Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETsElectrical and electronic engineeringNanoscale devicesNanoscale materialsUltra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by ...
Due to the effect of mirror charges induced in the metal by electrons in the semiconductor, the height of Schottky barrier (\(\Phi_{b}\)) is slightly affected by applied voltage and decreases at a degree of $$ \Delta \Phi_{b} = \sqrt[4]{{\frac{{q^{3} N_{d} }}{{8\pi^{...
A first effect isbarrier loweringby the image charge: at a high electric field the charges in the depleted region interact with the image charge recalled in the metal and modify the effective height of the barrier. A second effect arises frompre-breakdown impact ionization, which produces a smo...
\Effect Transistors Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect TransistorsLowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistorsdoi:10.1002/adma.201804422...
increased. The lowering of the Schottky barrier would occur as a result of the image charge lowering effect. The relationship between electrical field and Schottky barrier lowering (Δ ϕ ) is expressed as, ∆ϕ = qE 4πεs (5) where tively. q, E, and The I–V cεu Sra...
increased. The lowering of the Schottky barrier would occur as a result of the image charge lowering effect. The relationship between electrical field and Schottky barrier lowering (Δ ϕ ) is expressed as, ∆ϕ = qE 4πεs (5) where tively. q, E, and The I–V cεu Sra...
went further to explain the SBH lowering effect of annealing at T ≥ 350 °C for a wide range of metals deposited on O-diamond [94]. Experimentally, they attributed the reduction in SBH of the Zr/O interface to the thermally induced evaporation of hydroxyl and carbonyl species from the O...
A Schottky barrier device includes a semiconductor substrate, a first contact metal layer, a second contact metal layer and an insulating layer. The semiconductor substrate has a fi
(barrier lowering effect) responsible for high reverse currents are blocked and the reverse currents are reduced. This blocking effect is predominantly determined by the epitaxial p-n structure and strongly dependent on structural parameters Dt (depth of the trench), Wm (distance between the trenches...