Schottky Barrier DiodeBarrier LoweringTransfer CharacteristicsSilver Nano-ParticlesBarrier InhomogeneitiesIn this study, two different contacts, Ni Schottky contacts and Ni Schottky contacts with embedded Au-nanoparticles (Au-NPs) on AlGaN/GaN, were fabricated to demonstrate the modification of the Schottky ...
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is respon...
\Effect Transistors Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect TransistorsLowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistorsdoi:10.1002/adma.201804422...
Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE Schottky barriersSemiconductor process modelingThickness measurementTunnelingA thin, highly Si-doped (n-type) interfacial layer is used for controlled barrier ... K Shenai,SJ Eglash,RW Dutton,... - ...
Due to the effect of mirror charges induced in the metal by electrons in the semiconductor, the height of Schottky barrier (\(\Phi_{b}\)) is slightly affected by applied voltage and decreases at a degree of $$ \Delta \Phi_{b} = \sqrt[4]{{\frac{{q^{3} N_{d} }}{{8\pi^{...
Huansheng Ning1, Zong-Liang Huo2 & Jin-Yan Wang3 A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance...
Effect of interfacial hydrogen in CoSi2/Si(100) Schottky-barrier contacts. DOI: MO Aboelfotoh,AD Marwick,JL Freeouf - 《Physical Review B Condensed Matter》 被引量: 16发表: 1994年 加载更多来源期刊 Applied Physics A 研究点推荐 Schottky barrier height lowering nanofabrication CoSi2 nanostructure...
A Schottky-barrier gate gallium arsenide field effect structure is made using a self-aligned gate fabrication technique. The resulting device includes source and drain regions, which are parts of a co
The metal oxide semiconductor field effect transistor (MOSFET) constitutes the fundamental building block of semiconductor technology. A large part of its success is due to the fact that it can be continuously scaled down to smaller dimensions while increasing circuit performance and lowering manufacturin...
Eine Alternative zur Verbesserung der Abschirmwirkung des Schottky- Effekt (Barrier Lowering Effect) einer JBS ist die in der DE 10 2004 053 761 vorgeschlagene TJBS. Eine TJBS (Trench-Junction-Barrier-Schottky-Diode) mit ausgefüllten Gräben wird in Abb. 2 beschrieben. Wie Fig. 2 ze...