Ultra low-k dielectric materials
So, to achieve lower dielectric constants, porosity needs to be introduced into the POSQ material. [0010] Several methods have been pursued to induce porosity into low dielectric materials, such as organic, low-k polymers or organic polysilica, low-k polymers. Once such method is the ...
These materials are found to have very small dielectric constants as low as 1.6. Properties of these materials, like dielectric constant, resistance to oxidation, hydrophobicity, thermal conductivity, Young's modulus, etc., are enlisted and considered for integrating these ultra-low-k dielectrics ...
To minimize a microelectronic device’s size whilst maximizing its operating frequency, a device’s components should be separated by a material possessing a dielectric constant that is as low as possible. A class of materials referred to as ultra low-k (ULK) dielectrics are commonly used for ...
As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay. However, all known low-k dielectrics exhibit low thermal conductivi
Interconnect delay begins to dominate the overall device delay at 0.18#mu#m design rule, thereby making copper and low k transitions attractive options to peruse. Decrease in inter-connect delay and improved device performance can be achieved using copper and low k dielectrics. Usage of low k ...
(2002), PTFE nanoemulsions as ultralow-k dielectric materials. Macromol. Symp., 179: 347–358. doi: 10.1002/1521-3900(200203)179:1<347::AID-MASY347>3.0.CO;2-C Author Information 1 Laboratorio TASC-INFM SS 14, Km 163,5 Basovizza I-34012 Trieste Italy 2 Ausimont S.p.A., p.le ...
Damage layer thickness can be reduced by up to 75% for films with k values 2.0, 2.2 and 2.3 depending on the initial k value of the film and the loading of the pore protection material.关键词: pore protection Ultra Low-k dielectric plasma induced damage ...
The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: kdoi:10.1038/nmat1291Lee, ByeongduPark, Young-HeeHwang, Yong-TaekOh, WeontaeYoon, JinhwanRee, Moonhor...
in Nanoporous Materials Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics Ch. 6 (IntechOpen, 2018). Zhao, L. et al. Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials. Appl. Phys. Lett. 99, 222110 (2011). Article ADS ...