Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: silicon-oxycarbide A new low-k material (silicon-oxycarbide, k=3.3) is developed to improve the mechanical strength of Cu/low-k interconnects. The film is shown to be over th... T Furusawa...
JUHA T. RANTALAJYRI PAULASAARIJARKKO PIETIKAINENTEEMU TORMANENNIGEL HACKERNUNGAVARAM VISWANATHAN
How to reduce k-value Dielectric constant k (also called relative permittivity εr) is the ratio of the permittivity of a substance to that of free space. A material containing polar components, which are represented as electric dipoles (e.g. polar chemical bonds), has an increased dielectric...
HSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of HSQ in multilevel interconnect schemes has been of considerable importance. In this study,...
A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density lay...
[0016] Process for Preparing Ultra Low-k Dielectric Material [0017] The process involves preparing a blend solution of (1) a thermally stable, low dielectric constant, organic-inorganic hybrid host polymer, (2) a thermally degradable organic polymer acting as a porogen (i.e. a porosity-induc...
To minimize a microelectronic device’s size whilst maximizing its operating frequency, a device’s components should be separated by a material possessing a dielectric constant that is as low as possible. A class of materials referred to as ultra low-k (ULK) dielectrics are commonly used for ...
(k=3.9), GeO2(K=5.2–5.8) or GeON (K∼6.0) layer between the high-K and Ge substrate. From a scaling perspective, it would be desirable to minimise alow-K dielectricin the gate stack[2], and so the most recent work has emphasised avoiding the introduction of a thin Si layer at...
A process of repairing a plasma etched low-k dielectric material having surface-bound silanol groups includes exposing at least one surface of the dielectric material to (a) a catalyst so as to form hydrogen bonds between the catalyst and the surface-bound silanol groups obtaining a catalytic int...