网络栅氧化层 网络释义 1. 栅氧化层 联电的90纳米工艺,采用九层铜导金属层、三栅氧化层(triplegate-oxide)及其它先进技术,符合高密度及低耗电的新一代芯片需 … www.istis.sh.cn|基于3个网页
A final thin layer of high-k dielectric is formed covering the three regions, so that the region with no oxide has the thinnest dielectric layer of only high-k material and the other two regions have the high-k dielectric over SiOlayers of different thickness. A final layer of gate ...
A final thin layer of high-k dielectric is formed covering the three regions, so that the region with no oxide has the thinnest dielectric layer of only high-k material and the other two regions have the high-k dielectric over SiOlayers of different thickness. A final layer of gate ...
Define Triple draw. Triple draw synonyms, Triple draw pronunciation, Triple draw translation, English dictionary definition of Triple draw. n. Poker in which each player is dealt five cards face down and may then discard and get replacements for a specif
“We are pleased to offer a zero layer 10V triple voltage CMOS process for mixed signal applications. This is a big step towards achieving leadership with our premium mixed signal processes, including triple gate oxide and ultra low noise processes already in production. We wi...
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a ...
A method to integrate silicon-oxide-nitride-oxide-silicon (SONOS) transistors into a complementary metal-oxide-semiconductor (CMOS) flow including a triple gate oxide structure. The memory device may include a non-volatile memory (NVM) t... K Ramkumar,I Kouznetsov,V Prabhakar,... 被引量: ...
网络三闸极氧化层;三氧化层;三栅极氧化层 网络释义
Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT... Woo-Seok,...
A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs The fringing fields induced by the drain and the source through the buried oxide (BOX) and substrate of short-channel silicon-on-insulator (SOI) MOSFETs ca... T Ernst,R Ritzenthaler,O Faynot,... - 《IEEE ...