网络栅氧化层 网络释义 1. 栅氧化层 联电的90纳米工艺,采用九层铜导金属层、三栅氧化层(triplegate-oxide)及其它先进技术,符合高密度及低耗电的新一代芯片需 … www.istis.sh.cn|基于3个网页
A final thin layer of high-k dielectric is formed covering the three regions, so that the region with no oxide has the thinnest dielectric layer of only high-k material and the other two regions have the high-k dielectric over SiOlayers of different thickness. A final layer of gate ...
This 0.13um triple gate oxide CMOS process features one additional layer of gate oxide introducing 1.8V CMOS into a standard 1.2/3.3V CMOS array on 0.13um technology. This process is fully compatible with the standard CMOS process and is designed to keep all device parame...
网络三闸极氧化层;三氧化层;三栅极氧化层 网络释义