必应词典为您提供Tri-gate-transistor的释义,网络释义: 三栅极晶体管;三闸极电晶体;三门晶体管;
(redirected fromTri-gate transistor) Thesaurus Encyclopedia field-effect transistor n (Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is control...
3D tri-gate transistorsFinFETDELTAThe 3D tri-gate transistors are a remarkable breakthrough in the realm of CMOS technology. These transistors can be considered as a reinvention of the transistor, in a way that they have supplanted the conventional flat 2D planar gate with an incredibly thin 3D...
tri-gate晶体管的工艺模拟及仿真 Tri-Gate晶体管的工艺模拟及仿真 摘要 近年来，随着半导体产业以及科技的飞速发展，半导体工艺尺寸的不断缩小，业界内传言摩尔定律也即将走到尽头。但是Intel在2011年宣布的Tri- Gate晶体管，也称为3D晶体管的成功研制使得处理器的性能大幅度提升，同时也可以让摩尔定律得到一定年限的...
As is shown in figure 1, the Tri-Gate transistor protrudes its Si fin upward. Metal gate wraps the fin from two <110> sidewalls and <100> top surface [2]. Moreover, there could be multiple fins instead of just one to further enlarge the surface between gate and inversion layer.Fig. ...
The nitride cap may then be removed. The thermal oxidation process may comprise annealing the substrate at a temperature between around 900 DEG C and around 1100 DEG C for a time duration between around 0.5 hours and around 3 hours.R·里奥斯J·T·卡瓦列罗斯S·M·塞亚...
A non-conformal metal silicide in a transistor of recessed drain and source configuration may provide enhanced efficiency with respect to strain-inducing mechanisms, drain/source resistance and the like. For this purpose, in some cases, ... J Hoentschel,Griebenow, Uwe,Wei, Andy 被引量: 14发...
Accordingly, new MOSFET structures, such as the dual-gate (FinFET) and the tri-Gate transistor, have been proposed to replace the conventional planar MOSFET. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled ...
A transistor structure that increases uniaxial compressive stress on the channel region of a tri-gate transistor comprises at least two semiconductor bodies formed on a substrate, each semiconductor body having a pair of laterally opposite sidewalls and a top surface, a common source region formed ...
关键词:Tri-Gate晶体管,3D晶体管,器件模拟,电学特性大连东软信息学院毕业设计(论文)AbstractProcessingSimulationandEmulationoftheTri-GateTransistorAbstractInrecentyears,Inrecentyears,withtherapiddevelopmentofthesemiconductorindustryaswellasscienceandtechnology,semiconductorprocessgeometriescontinuetoshrink,theindustryrumorsthat...