PURPOSE:To reduce the resistance and electrostatic capacitance of a transistor and increase the conversion conductance thereof by intruding a depletion layer region to part of source region by the effect of drain voltage or gate voltage. CONSTITUTION:Drain voltage is applied to a source region 2 ...
权威英汉双解 英汉 英英 网络释义 transistor n. 1. 晶体管a small electronic device used in computers, radios, televisions, etc. for controlling an electric current as it passes along a circuit 2. 晶体管收音机a small radio with transistors...
The modern successor to thetransistoris the integrated circuit. 晶体管的现代后继者是集成电路. 辞典例句 Atransistorhave Number 3 electrodes, the emitter , the base and the collector. 晶体管有三个电极, 即发射极, 基极和集电极. (电子) 期刊摘选 ...
A circuit with a power transistor (T1) having a connection (G) connected to a control (10) and load (D-S) connections. The control comprises two control units with current source (Tq1,Tq2) the controls having current sources (Iq3,Iq4) at the output (AK) which are produced non-linearly...
An integrated circuit includes both LDMOS devices and one or more low-power CMOS devices that are concurrently formed on a substrate using a deep sub-micron VLSI fabrication process. The LDMOS polycrystalline silicon (polysilicon) gate s... Levin, Sharon,Naot, Ira,Heiman, Alexei 被引量: 7发表...
With this structure, the PMOS provides a resistor component when the output terminal short-circuits.doi:US20050045964 A1Kazuo HenmiNobuyuki OtakaUSUS20050045964 * Aug 24, 2004 Mar 3, 2005 Kazuo Henmi Transistor circuit and booster circuit
PROBLEM TO BE SOLVED: To provide a CMOS circuit for compatibly achieving a high-speed operation and low power consumption, particularly a 2-input CMOS-NAND gate circuit. SOLUTION: No matter which of the first gates of two vertically stacked 4-terminal double insulation gate field effect transis...
Optimization and Application of GaAs-based Quantum Wire Transistors Utilizing Schottky In-Plane Gates and Wrap Gates (IPG)- and wrap gate(WPG)-based quantum wire transistors were investigated, and the device structures were optimized for their integrated circuit ... M Yumoto,M Iwaya,S Kasai,......
and a parasitic bipolar transistor (3) having a terminal connected to said body terminal, characterized in that it comprises the steps of: providing a capacitor (C1) connected between the body and source terminals of the PMOS transistor;using a control circuit (5) to suppress the body effect ...
A gate drive circuit to drive a gate terminal of a power transistor. The gate drive circuit includes a first capacitor, a first switch, a measurement circuit and a reference source