Two input AND=gate with high intrinsic security against breakdown - has series transistor oscillator with variable dynamic emitter impedance and clipped amplifier using resonant transformer couplingThe oscillator (4) gives an output signal of the first input voltage (E1) exceeds a first threshold. A ...
With an H signal at A and B, the transistor (10) conducts.doi:DE2629270 A1MERKLE PAULDE2629270A1 * Jun 30, 1976 Jan 12, 1978 Paul Merkle XOR:gate circuit - has NAND:gates each with two input diodes and two series transistors controlling switching of output transistor...
The monostable flip-flop consists of two input gates (G1), G2), the first of which is coupled via an RC timing circuit to an emitter-follower transistor (T1) acting as impedance converter. The emitter-follower output is cross-coupled back to the second gate second input, and the output...
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor Jing Chen Ming-Yuan Sun Lin Han Nano-Micro Letters (2024) Sensitivity Investigation of Underlap Gate Cavity-Based Reconfigurable Silicon Nanowire Schottky Barrier Transistor for Biosensor Application Anil Kumar Vija...
The dynamic divider comprises two basic switching circuits (41,43) formed by the transfer gate in which the threshold voltage is less than that for the first transistor (411, 431) than the second (412, 432). The transistors may be MESFETs made with a thin n-type gallium arsenide layer ...
In the case when any one input is HIGH: Only the relative transistor will be ON leaving the other OFF. With that the entire supply voltage appears across the transistor which is in OFF state. Because output Y1 is voltage across both transistors Q1 and Q2, Y1 will be HIGH. ...
Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to
A two-transistor tri-state inverter is provided, made from a NMOS dual-gate thin-film transistor (DG-TFT) having a top gate, a back gate, and source/drain regions. A PMOS DG-TFT also has a top gate, a back gate, and S/D regions, and the NMOS first S/D region is connected to...
bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS2-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd2O5for advanced transistor applications...
A gain enhanced cascoded CMOS amplifier includes: a cascading transistor having its source connected to a folding point node, its drain connected to a first amplifier output terminal, and a gate, the folding point node being coupled to a... C Yun - US 被引量: 20发表: 2001年 ...