Two input AND=gate with high intrinsic security against breakdown - has series transistor oscillator with variable dynamic emitter impedance and clipped amplifier using resonant transformer couplingThe oscillator (4) gives an output signal of the first input voltage (E1) exceeds a first threshold. A ...
A MOS transistor includes a substrate, an insulation layer, a gate and a dielectric layer. The substrate includes a drain and a source separately positioned on the surface of the substrate. The insulation layer is positioned on the surface of the substrate between the drain and the source. The...
4. The oscillator recited in claim 3 wherein the second ring includes a transistor having a gate geometry selected to provide the signal produced in the second ring with the lowest frequency for the oscillator. 5. The oscillator rec... VX Hoai,T Vu - US 被引量: 18发表: 1997年 加载更多...
These properties enable MoS2-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd2O5 for advanced transistor applications. Yunseok Choi , Seung-Il Kim & Sang-Hoon Bae Article | 22 January 2025 Double-sided van ...
Mirror twin boundaries in monolayer MoS2—line defects with reflection-mirroring symmetry—are one-dimensionally metallic. In this work, the authors fabricate these mirror twin boundary networks by epitaxity and incorporate them into ultrascaled 2D transistor circuits as gate electrodes. ...
et al. Dielectric material technologies for 2-D semiconductor transistor scaling. IEEE Trans. Electron Devices 70, 1454–1473 (2022). Article Google Scholar Radosavljević, M. et al. Demonstration of a stacked CMOS inverter at 60nm gate pitch with power via and direct backside device contacts...
The mixer employs a fourth-harmonic mixer with a reduced-size 0°/180° Marchand Balun and two resistive field-effect transistor mixer cells. The chip ... YC Li - 《Microwave & Optical Technology Letters》 被引量: 0发表: 2007年 CMOS Vertical Multiple Independent Gate Field Effect Transistor ...
The dynamic divider comprises two basic switching circuits (41,43) formed by the transfer gate in which the threshold voltage is less than that for the first transistor (411, 431) than the second (412, 432). The transistors may be MESFETs made with a thin n-type gallium arsenide layer ...
With an H signal at A and B, the transistor (10) conducts.doi:DE2629270 A1MERKLE PAULDE2629270A1 * Jun 30, 1976 Jan 12, 1978 Paul Merkle XOR:gate circuit - has NAND:gates each with two input diodes and two series transistors controlling switching of output transistor...
The MOS transistors (P1,N1) are each connected via a further MOS transistor (P2,N2) of the same conductivity, to a pole of the operating voltage source. The gate electrodes of the further MOS transistors (P2,N2) are momentarily connectable to the output (2), and have a larger effective...