A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MCO) containing layer is formed over the at least one first gate dielectric layer, wherein the transition-metal (M) has an atomic percentage of about 40 at. % or ...
aThe transistors comprise the gate for turning the transistors on or off according to the control signal applied to the gate and the other gate for modifying the threshold voltage of the transistors according to the other control signal applied to the latter gate, where the voltage level of the...
an AND gate is also constructed by diodes. Similarly, a simple NAND gate can be constructed by using transistors. The NAND gate circuit connection is as shown below. The inputs of the gates are the bases of the transistors.
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The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are prov...
ayou are the anique one whou I love the whou lipetime! 您是anique一whou I爱whou lipetime![translate] aone of the transistors is known as a floating gate,and the other one is the control gate 因为一个浮动门和另一个是控制门,其中一支晶体管知道[translate]...
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact Over Active Gate (COAG) for Highly Scaled CMOS Technology We report an improved air spacer that is successfully co-integrated on FinFET transistors with Self-Aligned Contacts (SAC) and Contacts Over Active Gate (C.....
A method for fabricating double-gate and tri-gate transistors in the same process flow is described. In one embodiment, a sacrificial layer is formed over stacks that include semiconductor bodies and insulative members. The sacrificial layer is planarized prior to forming gate-defining members. Afte...
The multimode transistors can enable multimode neural networks: STP for artificial neural networks (ANNs), LTP for recurrent neural networks (RNNs) and LIF behaviour for spiking neural networks (SNNs). ANN With short gate pulses (2 V; duration, 20 ms; period, 40 ms), the increased...
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