网络三栅极晶体管;三闸极电晶体;三门晶体管 网络释义
field-effect transistor (redirected fromTri-gate transistor) Thesaurus Encyclopedia field-effect transistor n (Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped sourc...
3D tri-gate transistorsFinFETDELTAThe 3D tri-gate transistors are a remarkable breakthrough in the realm of CMOS technology. These transistors can be considered as a reinvention of the transistor, in a way that they have supplanted the conventional flat 2D planar gate with an incredibly thin 3D...
tri gate Characteristics and Performance of Tri-Gate Transistor Mo Chen Electrical and Computer Engineering Department University of Massachusetts Amherst Amherst, MA 01003-9284 U.S.A mochen@engin.umass.edu Abstract— In this paper, Tri-Gate transistor structures are described, some of the physical ...
Tri-Gate晶体管的工艺模拟及仿真 摘要 近年来，随着半导体产业以及科技的飞速发展，半导体工艺尺寸的不断缩小，业界内传言摩尔定律也即将走到尽头。但是Intel在2011年宣布的Tri- Gate晶体管，也称为3D晶体管的成功研制使得处理器的性能大幅度提升，同时也可以让摩尔定律得到一定年限的延续。Intel此举堪称晶体管历史上最...
Two-Transistor Floating-Body Dynamic Memory Cell Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better sign... JG ...
Influence of crystal orientation and body doping on trigate transistor performance This work characterizes long channel trigate transistors with respect to the systematic influence of crystal orientation and body doping on performance iss... E Landgraf,W. Roesner,M. Staedele,... - 《Solid State ...
trigate transistor since it has three gate electrodes. Since the channel region of the semiconductor body is covered by the gate electrode on three sides, the electrical field provided by the gate electrode can fully deplete the channel region of the device, providing advantageous electrical ...
Intel will introduce trigate transistors beginning with the 32-nm technology node scheduled from 2009. With this new three-dimensional transistor structures, Intel hopes to achieve significant power savings as well as performance improvements.
Accordingly, new MOSFET structures, such as the dual-gate (FinFET) and the tri-Gate transistor, have been proposed to replace the conventional planar MOSFET. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled ...