In the paper the problem of measurements of the thermal parameters values of MOS power transistors is considered. The results of measurements showing the i... Krzysztof GÓRECKI,Janusz ZARĘBSKI - 《Przeglad Elektrotechniczny》 被引量: 7发表: 2009年 Simulation and transient analysis of organic/in...
The MOS transistors are characterized by the nth power law model. In order to emphasize the nonlinear behavior of a CMOS inverter, the interconnect is modeled as a lumped RC load. The propagation delay of a CMOS inverter is characterized for both a fast ramp and a slow ramp input signal. ...
Network representation of the large-signal transient response of MOS transistors 来自 掌桥科研 喜欢 0 阅读量: 1 作者:FA Lindholm,JI Arreola 摘要: First Page of the Article会议名称: Electron Devices Meeting, 1975 International 收藏 引用 批量引用 报错 分享 全部来源 求助全文 掌桥科研 相似文献Elemen...
It is known that ultra-shallow junctions as the source and drain of modern complementary metal–oxide–semiconductor (CMOS) transistors help suppress the short channel effect8. The SAMM doping technique has the unique advantage of forming ultra-shallow junctions8. However, the ultra-scaled thickness...
mobile devices and can affect performance and efficiency for wall-power operated circuits. One large consideration is that PowerMOS devices themselves do not operate as ideal devices. Performing circuit analysis at the device pins leaves out important information about what is happening inside these...
Charge injection in MOS analog switches, also called pass transistors or transmission gates, is approached by using the continuity equation. Experimental r... G Wegmann,EA Vittoz,F Rahali - IEEE J. of Solid-State Circuits 被引量: 520发表: 1987年 The vestibular nerve of the chinchilla. V. ...
These phenomena are explained by the retarded flow of holes along the Box surface because of the trench sidewalls. 展开 关键词: insulated gate bipolar transistors semiconductor device models semiconductor diodes IGBT SOI collector current diodes silicon-on-insulator substrates trenched Box layer decays ...
Photoelectric laser stimulation applied to latch-up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory Microelectron Reliab (2011) F.Carraraet al. Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors ...
Transient electrothermal simulation of ESD protection circuits using the 3-D finite element device simulator will be shown to explain the electrothermal physics in ESD protection circuits in 0.5 and 0.25 μm channel length CMOS technologies. Simulation, ESD and failure analysis will be compared for ev...
Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications Transient thermal analysis of GaN heterojunction field-effect transistors (HFETs) was carried out in this letter, with a hybrid nonlinear finite element me... J Xu,Yin, W.-Y.,J Mao - 《IEEE Microw...