PURPOSE:To improve a MOS transistor in switching characteristics by a method wherein the transistor is changed in gate length. CONSTITUTION:A gate 2 different from that of a conventional MOS transistor in structure is formed large in gate length near a gate electrode and becomes gradually smaller...
展开 关键词: electrostatic discharge insulated gate field effect transistors interface electron states passivation semiconductor process modelling sputter etching ESD MOS transistor characteristics degradation annealing antenna ratio 会议时间: 1993 被引量: 6 收藏...
Influence of avalanche transistor switching mode on waveform characteristics of solid-state pulse source The design of the Marx circuit based on avalanche transistors (ATs) is one of the effective techniques for developing solid-state pulse sources to generate nanosecond pulses. However, the influence ...
低开启电压低内阻MOS-A03416.pdf,July 2003 AO3416 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6.5 A operatio
品类:Field Effect Transistor 价格:￥6.8704 现货:59,997 购买 AO3422 品牌:AOS 品类:晶体管 价格:￥1.1700 现货:51,903 购买 AP6P250N 品牌: 品类: 价格: 现货: 购买 UPA2721AGR-E1-AT 品牌: 品类: 价格: 现货: 购买 YJQ15GP10A 品牌: 品类: 价格: 现货: 购买 SS10U100 品牌: 品类...
The AP130N20P is silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher ...
A switching transistor is connected in parallel to said re... T Kuzumoto,Kiyoshi Kumata,Keizo Yamamoto 被引量: 4发表: 1979年 COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUIT PURPOSE:To obtain the output signal featuring the hysteresis characteristics to the input signal and thus to utilize the ...
DC and AC Characteristics Modelling of Si CoolMOS Transistor Under PSPICE The aim of this work is to present a SPICE sub-circuit for the power CoolMOS transistor that reproduces its static and dynamic behaviour and that can be ea... S Laafar,K Baraka,N Boumaaz,... - 《Advanced Science...
MOS Transistor Threshold voltage of the MOS transistor First-order Current-Voltage Characteristics Derivation of Velocity-Saturated Current Equations Subthreshold Condition Capacitance of the MOS transistor Digital Integrated Circuits Faculty of Materials and Energy, GDUT * 2.1 Introduction As the transistor ...
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-sta...