Films with a composition (molar ratio) of Mn:Zn:Fe=20:5:75 had a saturation magnetization value of 420 emu/cm{sup}3 after annealing at 800掳C for 1 hour. The effect of remanent magnetization on the drain current - drain voltage (I{sub}D -V{sub}D) characteristics of MOS transistor ...
MacLeod, T. C. and Ho, F. D.: I-V Characteristics of a Ferroelectric Field Effect Transistor. Integrated Ferroelectrics. 2001; 34: 21-26.T. C. MacLeod and F. D. Ho, I-V Characteristics of a Ferroelectric Field-Effect Transistor, Integrated Ferroelectrics, 34, 21-26 (2001)....
摘要: Presents information on a study which examined the direct current I-V characteristics of silicon carbide junction field-effect transistor (JFET) using finite-element semiconductor device simulator SPISCES. Material properties; Results; Conclusions....
Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor ... A metal-ferroelectric-metal-oxide-semiconductor field effect transistor(MFMOS-FET)with a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si structur...
Combining DC current–voltage and low-frequency capacitance–voltage characteristics with an equivalent circuit, we report a simple technique for a complete and separate extraction of parasitic resistances (RG, RS, RD, and Rsub) in individual MOSFETs without employing multiple devices or complicated S...
Changes from Revision H (July 2014) to Revision I Page • Changed VGATEZ MIN value in Electrical Characteristics From: 15 V To: 12 V ... 7 Changes from Revision G (February 2013) to Revision H Page • Updated data sheet to new TI standards: added new sections and reordered document...
Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated.The results show ... L Gang,Q Xu - 《Chinese Journal of Semiconductors》 被引量: 0发表: 2005年 加载更多来源...
This pin must have a filter capacitor with low ESR characteristics in order to minimize output ripple voltage. 7.3.4 Oscillator Frequency (RT) Oscillator frequency is selectable by means of a resistor placed at the RT pin. The switching frequency (f(SW)) can be set in the range of 200 ...
In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the LambertW function, is used to extract the physical parameters of organic and inorganic Schottky barrier diodes (SBDs). The extra
characterized in that each transistor has a back control gate formed in the base substrate below the channel of the transistor and capable of being biased for modulating the threshold voltage of the transistor, and in that at least one of the transistors is configured in order to operate in a...