Films with a composition (molar ratio) of Mn:Zn:Fe=20:5:75 had a saturation magnetization value of 420 emu/cm{sup}3 after annealing at 800掳C for 1 hour. The effect of remanent magnetization on the drain current - drain voltage (I{sub}D -V{sub}D) characteristics of MOS transistor ...
MacLeod, T. C. and Ho, F. D.: I-V Characteristics of a Ferroelectric Field Effect Transistor. Integrated Ferroelectrics. 2001; 34: 21-26.T. C. MacLeod and F. D. Ho, I-V Characteristics of a Ferroelectric Field-Effect Transistor, Integrated Ferroelectrics, 34, 21-26 (2001)....
Fabrication and Characteristics of a Si-Based Single Electron Transistor硅单电子晶体管的制造及特性(英文) Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching... Lu Gang,Chen Zhiming,Wang Jiannong...
Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate diele... A stacked Y2O3/HfO2 multimetal gate dielectric with improved electron mobility and charge trapping characteristics is repo... Feng,Zhu,Se,... - 《Electron Device L...
Seller recommend. Product good якостиивідповідаї characteristics Translated from RussianShow original Original spot low price fast delivery SOP-8 chip IC microcontroller ATTINY13A-SU 1234...16 Know your supplier Shenzhen Leixinrui Electronics Co., Ltd. Multispecial...
(V–) TA = –40°C to +125°C 3 µV/°C 80 330 µV/V 1 µV/V INPUT BIAS CURRENT IB IOS NOISE Input bias current Input offset current TA = 25°C TA = –40°C to +125°C ±1 ±10 See Typical Characteristics ±1 ±10 pA pA en Input voltage noise, en Input voltage...
Changes from Revision H (July 2014) to Revision I Page • Changed VGATEZ MIN value in Electrical Characteristics From: 15 V To: 12 V ... 7 Changes from Revision G (February 2013) to Revision H Page • Updated data sheet to new TI standards: added new sections and reordered document...
I-V hysteresis characteristics of nano-field effect transistor (nanoFET) sensor with a floating metal gate electrodenanoFET sensorFloating metal gateHysteresisRepeatable ion detectionBack-gate sweepA sensor based on a nano-field-effect transistor (nanoFET) can detect airborne charged substances and ...
The original do model of the lambda bipolar transistor proposed and the important device parameters characterized thereby are under the constraints of several approximations. It is shown to be adequate for base current drives higher than 10 渭A and for devices with high values of threshold voltages...
This pin must have a filter capacitor with low ESR characteristics in order to minimize output ripple voltage. 7.3.4 Oscillator Frequency (RT) Oscillator frequency is selectable by means of a resistor placed at the RT pin. The switching frequency (f(SW)) can be set in the range of 200 ...