In this paper, we present the design of transistor laser (TL) structure with a SiGeSn emitter, GeSn QW embedded in the SiGeSn base, and a GeSn collector grown on the top of 200nm thick strain-relaxed GeSn buffer, compatible with current CMOS technology. The GeSn layer is assumed to ...
The resulting stack exhibited a low leakage current density (JL) and no frequency dispersion in its capacitance–voltage characteristics after undergoing forming gas annealing. The obtained dielectric constant (k ≈ 32) for the HEO film is promising for advanced gate stacks and transistor applications...