M. Bolt, "Matching Properties of MOS Transistors and Delay Line Chains with Self-Aligned Source/Drain Contacts", in Proc. IEEE Int. Conf. Microeletronic Test Structures, Mar. 1996, pp 21-25.M. Bolt, "Matching properties of MOS transistors and delay line chains with self-aligned source/...
The matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analysed and measured. Improvements of the existing theory are given, as well as extensions for long distance matching and rotation of devices. The matching results have been verified by...
Matching Properties of Deep Sub-Micron Mos Transistors 电子书 读后感 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 类似图书 点击查看全场最低价 出版者:Springer Verlag 作者:Croon, Jeroen A./ Sansen, Willy M. C./ Maes, Herman E. 出品人: 页数:220 译者...
我要写书评 Matching Properties of Deep Sub-Micron Mos Transistors的书评 ··· ( 全部0 条 ) 论坛 ··· 在这本书的论坛里发言 + 加入购书单 谁读这本书? ··· 二手市场 ··· 在豆瓣转让 手里有一本闲着? 订阅关于Matching Properties of Deep Sub-Micron Mos Transistors的评论: ...
As we have seen in Chapter 1, in a transmission line system which has a reference characteristic impedance of Z o any termination or line which has an impedance other than Z o will cause reflections of power to be set up. Any devices such as diodes, transistors, mixers and antennas are ...
Stress engineering is being applied to Silicon MOS transistors as a mean to improve the electron mobility and to create faster switching gates [1]. This is achieved using SiGe or Si 3 N 4 films to create stress in the channel region of the transistor. Film thickness, composition and ...
Using quantum properties instead of the conventional on/off switching of bits in the regular processors, quantum processors can process the information on a much larger scale. Last year, IBM unveiled the Eagle quantum processor with 127 qubits. This year, the company is bringing in 433 qubits ...
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due...
Massimo Conti, Paolo Crippa, Simone Orcioni, and Claudio Turchetti., “Layout-based statistical modeling for the prediction of the matching properties of MOS transistors,” IEEE Trans. Circuits System, pp.680-685, May 2002. :Conti, M., Crippa, P., Orcioni, S., & Turchetti, C. (2002)...
Based on 0.18 m MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as...