discharge (ESD) protection circuit includes a transistor with a gate electrode isolated from the semiconductor substrate by a thick oxide, a collector clamp coupled with a pad and the gate electrode, and an emitter clamp coupled between the gate electrode and the emitter of the transistor. Until...
1) thick gate oxide 厚栅氧1. The on-resistance degradations of the p-type lateral extended drain MOS transistor(pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different,which has been experimentally investigated. 文中同时提出了一种改进方法:用场氧代替厚栅氧作为...
Hot-carrier-induced degradation in the p-type symmetric lateral DMOS transistor (ps-LDMOS) with thick gate oxide has been experimentally investigated. It is noted that only one peak bulk current is observed for different Vgs owing to the Kirk effect hardly happening in the ps-LDMOS. Experimental...
An output driver on an integrated circuit (IC) includes at least one transistor that has a thicker gate oxide than other standard transistors in the IC. In one embodiment, the output driver includes two pull-up transistors. A first pull-up transistor has a thicker gate oxide than standard tr...
US6124171 1998年9月24日 2000年9月26日 Intel Corporation Forming first gate oxide film of first thicknes on a substrate, followed by a hydrogen balanced silicon nitride film over the oxide film, masking and etching both film to expose substrate area, growing oxide film of second thickness...
Hence, the gate oxide layer23according to the present invention represents a relatively higher dielectric constant at the center portion of the channel and a relatively lower dielectric constant at the edge portion of the channel. Accordingly, it is possible to obtain a transistor, in which a gat...
A method for fabricating a CMOS device includes the following steps. A wafer is provided. STI is used to form at least one active area in the wafer. A silicon oxide layer is deposit
Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO2) high-魏 gate dielectric has been demonstrated previously a... K Yue - 《Nanomaterials》 被引量: 0...
discharge (ESD) protection circuit includes a transistor with a gate electrode isolated from the semiconductor substrate by a thick oxide, a collector clamp coupled with a pad and the gate electrode, and an emitter clamp coupled between the gate electrode and the emitter of the transistor. Until...
An integrated circuit chip and a method of fabricating the IC chip to include a transistor having a thick gate oxide in combination with STI. The method provides a wafer for which a source region location, a drain contact region location, an extended drain region location and a gate region ...