Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistorsAn electrostatic discharge (ESD) protection circuit that includes an transistor with a gate electrode isolated from the semiconductor substrate. The transistor can be an insulated gate bipolar transistor (...
Hot-carrier-induced degradation in the p-type symmetric lateral DMOS transistor (ps-LDMOS) with thick gate oxide has been experimentally investigated. It is noted that only one peak bulk current is observed for different Vgs owing to the Kirk effect hardly happening in the ps-LDMOS. Experimental...
A process of forming an integrated circuit, including forming a dummy oxide layer for ion implanting low voltage transistors, replacing the dummy oxide in the low voltage transistor area with a thinner gate dielectric layer, and retaining the dummy oxide for a gate dielectric for a DEMOS or LDMO...
1) thick gate oxide 厚栅氧1. The on-resistance degradations of the p-type lateral extended drain MOS transistor(pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different,which has been experimentally investigated. 文中同时提出了一种改进方法:用场氧代替厚栅氧作为...
US6124171 Sep 24, 1998 Sep 26, 2000 Intel Corporation Forming first gate oxide film of first thicknes on a substrate, followed by a hydrogen balanced silicon nitride film over the oxide film, masking and etching both film to expose substrate area, growing oxide film of second thickness...
A method for fabricating a CMOS device includes the following steps. A wafer is provided. STI is used to form at least one active area in the wafer. A silicon oxide layer is deposit
discharge (ESD) protection circuit includes a transistor with a gate electrode isolated from the semiconductor substrate by a thick oxide, a collector clamp coupled with a pad and the gate electrode, and an emitter clamp coupled between the gate electrode and the emitter of the transistor. Until...
A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The devi... SD Hu,L Zhang,XR Luo,... - 《Chinese Physics Letters》 被引量: 10发表: 2010年 Thin silicon layer p-channel SOI/PSOI LDMOS wit...
N2O-grown gate oxide is shown to have less SHH stress-induced interface traps than O2-grown oxide in p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) devices 展开 DOI: 10.1109/16.777160 被引量: 38 年份: 1999 收藏 引用 批量引用...
Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistorsAn electrostatic discharge (ESD) protection circuit that includes an transistor with a gate electrode isolated from the semiconductor substrate. The transistor can be an insulated gate bipolar transistor (...