Ko, C.H. Yshida, "MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages", Solid-State Electronics, vol. 39(10), p. 1515, 1996.Chen K , Wann H C , et al . MOSFE T Carrier Mobili
For a given gate oxide thickness, the threshold voltage is determined by the surface concentration of the shallow implants in the channel region. The channel implants are designed to achieve a threshold voltage low enough to provide high current drive, but they must be high enough to avoid surfa...
Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-dielectric-constant gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks...
Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages. Solid-State Electron. 39, 1515–1518 (1996). Article ADS CAS Google Scholar Hyun, C., Shur, M., Hack, M., Yaniv, Z. & Cannella, V. Above threshold characteristics of amorphous silicon alloy thin-...
-11. AA Pad Nitride Pullback,推一下SIN mask, 三个好处:扩大顶部开口,有利于Oxide的填充,防止void。将Corner rounding 顶部圆弧结构有利于减少漏电,(功率器件对该Corner要求非常高,底部和顶部都需要做成半圆形)。防止Notch(Divot)的形成。 如下图所示:由于尖端局部的应力集中导致氧化膜质脆弱,容易过度蚀刻接近隔...
the presence of SiC/SiO2 interface defects, the channel mobility of SiC MOSFET devices is grossly limited, and the reliability of the gate-oxide layer as well as the stability of the threshold voltage are also significantly affected, contributing to the poor performance of the gate-oxide ...
A C-V test measures the oxide capacitance in the strong accumulation region—where, for a p-type MOS-C, the voltage is negative enough that the capacitance is essentially constant and the C-V curve slope is essentially flat. There, the oxide thickness can be extracted from the ox...
The effect of grain size (D) on the threshold voltage (Vth) for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT). It is found that the threshold voltage (Vth) increases non-linearly with increasing silicon-oxide thickness (tox)...
substantial thermal cycling. The gate oxide thickness is increased to more than 1250 Å for a device with a reverse voltage rating of 250 volts and the channel concentration is reduced to maintain a low threshold voltage. The thicker oxide prevents single event damage under reverse bias voltage...
Mong-Song, "Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation," IEEE Trans. Electron Devices, vol. 49, pp. 840-846, 2002. 锛Chen, et al., “Downscaling Limit of Equivalent Oxide Thickness in Formation of ...