doi:US6060726 ASeok-Won ChoUSUS6060726 * 1999年4月22日 2000年5月9日 Lg Semicon Co., Ltd. CMOS transistor with two channel regions and common gate
A simple CMOS self-aligned double-gate poly-Si TFT technology In this paper, a new CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and demonstrated. The self-alignment between the top-gate and the bottom-gate is realized by a back-light exposure step....
In a CMOS semiconductor device using a silicon germanium gate and a method of fabricating the same, a gate insulating layer, a conductive electrode layer that is a seed layer, a silicon germanium electrode layer, and an amorphous conductive electrode layer are sequentially formed on a ...
Replacing the doped poly-silicon with a metal eliminates poly-depletion. The transistor acts like it has a thinner oxide in inversion; with associated capacitance and drive current improvement. Next Generation Intel considers high-k metal-gate to be in continual development, with45nm now well-establ...
Figure 6shows the structure of a CMOS transmission gate. It consists of an NMOS in parallel with a PMOS such that complementary voltages control the gates. Figure 6.CMOS transmission gate (TG). Vc = logic 1 biases both NMOS and PMOS into conduction closing the switch and giving an electrica...
Before CMOS, there was NMOS (also PMOS, but I have no direct experience with that). An NMOS gate consisted of a network of N-transistors between the output and Vss, and a resistor (actually a transistor with an implant) between the output and Vdd. If you are used to CMOS, that might...
Gated Quantum Resonant Tunneling Diode Using CMOS 优质文献 相似文献 参考文献 引证文献A novel submicron LDD transistor with inverse-T gate structure A novel submicron LDD transistor is demonstrated in which there is a thin extension of the gate polysilicon under the oxide sidewall-spacer giving the ...
Carbon nanotube field-effect transistors with a high transconductance can be fabricated using dense arrays of nanotubes and a directly grown gate dielectric that conformably coats the nanotube array. Aaron D. Franklin News & Views06 Dec 2024 Nature Electronics P: 1-2 Latest Research and Reviews...
Embedded computing systems are designed to run one application or one set of related applications that are normally integrated with the hardware and delivered as a single system; thus, despite the large number of embedded computers, most users never really see that they are using a computer!
Figure 1.(a) Scanning electron microscopy and (b) schematic illustration of 3D-stacked Ga2O3/NiO ambipolar transistors. Here, Ga2O3 and NiO are n- and p-channels respectively. (c) Cross-sectional transmission electron microscopy image of the gate region with zoom-in (d) bottom and (e) ...