A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base ...
Methods of measuring leakage currents and the capacitance of the storage capacitor in a single DRAM cell have been developed for correlation with the ele... JI Matsuda - 《IEEE Transactions on Electron Devices》 被引量: 6发表: 1994年 A new method to enhance frequency operation of CMOS ring ...
Method of fabricating CMOS transistor that prevents gate thinningProvided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the ...
Dark current mechanisms in a 4-Transistor CMOS imager pixel with a negative gate bias on a transfer gate have been investigated. The increase of dark current with the negative gate bias has been attributed to the Gate-Induced-Leak (GIL) Trap Assisted Tunneling (TAT) by examining dark current...
aPseudo-NMOS, static complementary CMOS, pass-transistor logic, differential logic: logic gate design and parameters, SPICE simulation 冒充NMOS,静态补全CMOS,通过晶体管逻辑,有差别的逻辑: 逻辑门设计和参量,香料模仿 [translate] 英语翻译 日语翻译 韩语翻译 德语翻译 法语翻译 俄语翻译 阿拉伯语翻译 西班牙语...
A program for automatic extraction of a gate-level description from a transistor-level description based on the layout of a CMOS VLSI circuit is presented. The extraction algorithm combines transistors to gates to arbitrary complexity without the help of any cell library. The resulting gate-level ...
A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-/spl mu/m CMOS logic technologies A. Chatterjee,M. Rodder,I. C. Chen.A transistor performance figure-of-merit including the effect of gate resistance and its application ...
The SRMZ1 CPU die (die 1) measures 7.91 mm × 8.59 mmfor a total area of 67.95mm2 for the whole die. The SRMZ1 CPU copper (Cu) die was fabricated on 300 mm wafers using Intel 4 CMOS process, employing high-k metal gate (HKMG) finFET transistors. There are 18 levels of ...
The conventional NSFET exhibits a concentration of electron density predominantly near the nanosheet surface, with a notable decrease toward its core, indicating limited gate control over the core region of the nanosheet. In contrast, the C-NSFET has a more uniform electron density distribution ...
The second technique, the Static/PTL method, uses a mix of static CMOS and pass transistor logic (PTL) to realize the circuit, using the relation between PTL and binary decision diagrams. The methods are very efficient and can handle all of the ISCAS85 benchmark circuits in minutes. A ...