The valley Hall effect in MoS transistors. The valley hall effect in MoS2 transistors. Science 2014, 344, 1489-1492. [CrossRef] [PubMed]Mak, K. F.; McGill, K. L.; Park, J.; McEuen,... KF Mak,KL Mcgill,J Park,... - 《Science》 被引量: 446发表: 2014年 The valley Hall ...
We investigate the valley Hall effect (VHE) in monolayer WSe2 field-effect transistors using optical Kerr rotation measurements at 20 K. While studies of the VHE have so far focused on n-doped MoS2, we observe the VHE in WSe2 in both the n- and p-doping regimes. Hole doping enables ...
L. The valley Hall effect in MoS2 transistors. Science 344, 1489–1492 (2014). Article ADS CAS Google Scholar Majumdar, A., Kim, J., Vuckovic, J. & Wang, F. Electrical Control of Silicon Photonic Crystal Cavity by Graphene. Nano Lett. 13, 515–518 (2013). Article ADS CAS Google ...
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection...
Valleytronic device based on graphene is recently attracting growing interest because of its potential applications such as in quantum information storage
Valley and spin Hall effectMonolayer MoS2Recently, the nonlinear optical processes study on monolayer MoS2 has revealed the existence of a trigonal warping in the band structure which distorts the Fermi surface from a circle at low energies to a triangle at higher energies. Here we theoretically ...
we use the transfer-matrix method to illustrate the effect of a strain on the valley-dependent transport properties of electrons in a graphene with a realistic magnetic field. We find that the valley polarization strongly depends on the strength and the width of the strained barrier rather than ...
We investigate the valley Hall effect (VHE) in monolayer WSe2 field-effect transistors using optical Kerr rotation measurements at 20 K. While studies of the VHE have so far focused on n-doped MoS2, we observe the VHE in WSe2 in both the n- and p-doping regimes. Hole doping enables ...
L. The valley Hall effect in MoS2 transistors. Science, 344, 1489–1492, doi: 10.1126/ 9. Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109, doi: 10.1103/RevModPhys.81.109 (...
The valley hall effect in MoS2 transistors. Science 2014, 344, 1489–1492. [CrossRef] [PubMed] 32. Ester, M.; Kriegel, H.P.; Sander, J.; Xu, X. A density-based algorithm for discovering clusters in large spatial databases with noise. In Proceedings of the 2nd International Conference...