分享一篇来自西安电子科技大学王利明课题组的新研究成果,本文以“Simulating tactile and visual multisensory behaviour in humans based on an MoS2 field effect transistor”为题发表于期刊Nano Research,原文链接:http://doi.org/10.1007/s12274-023-5467-7。希望对您的科学研究或工业生产带来一些灵感和启发。 生物...
图3:范德华vdW集成3D金属MoS2晶体管的接触特性。 图4:转移Ag接触的MoS2背栅场效应晶体管Field Effect Transistor,FET阵列的电学特性。 该项研究,报道了一种晶圆级石墨烯辅助转印技术,用于在2D材料和3D金属电极之间,制造高质量范德华vDW接触,产...
西安电子科技大学王利明课题组在《Nano Research》期刊上发表了新成果，以“Simulating tactile and visual multisensory behaviour in humans based on an MoS2 field effect transistor”为题，探讨了如何利用MoS2场效应晶体管模拟人类的触觉和视觉多感官行为，为人工智能和仿生电子学领域提供了新的灵感和可能。
相关研究成果以“Static and Dynamic Piezo-potential Modulation in Piezo-electret Gated MoS2 Field Effect Transistor”为题发表在ACS nano上(DOI:10.1021/acsnano.8b07477)。该项工作得到了国家自然科学基金、北京市自然科学基金等经费的支持。
Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization. Nano Res. 2015, 8, 2340-2350.Lee, D. W.; Lee, J.; Sohn, I. Y.; Kim, B. Y.; Son, Y. M.; Bark, H.; Jung, J.; Choi, M.;...
图4:转移Ag接触的MoS2背栅场效应晶体管Field Effect Transistor,FET阵列的电学特性。 该项研究,报道了一种晶圆级石墨烯辅助转印技术,用于在2D材料和3D金属电极之间,制造高质量范德华vDW接触,产率接近100%。通过在4英寸石墨烯晶片上,沉积金属电极,弱粘附金属(Cu、Ag和Au)和强粘附金属(Pt、Ti和Ni)都可以容易地剥离...
近日,清华大学集成电路学院的任天令教授团队就上述问题开展了研究,相关论文以“Simulation of MoS2stacked nanosheet field effect transistor”为题,作为封面文章在Journal of Semiconductors (《半导体学报》) 第8期发表,第一作者是清华大学博士研究生沈阳。 图1. 堆叠型二维...
field effect transistorshumidityhysteresismolybdenum disulfide2D semiconductors, such as molybdenum disulfide (MoS2), are emerging materials for field effect transistor (FET) channels in the field of nano〆lectronics. These atomically thin 2D films are particularly sensitive to moisture due to their large...
1. Introduction According to the 2021 International Roadmap for Devices and Systems (IRDS),gate-all-around (GAA) transistor will replace FinFET from 3 nm technology node,and it will apply to 1 nm technology node.In the next step,the goal of scaling down will be not only the decreased lea...
field‐effect transistorsmagnetic fieldMoS2 flakespiezopotentialpolarization statesUtilizing magnetic field directly modulating/turning the charge carrier transport behavior of field-effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro鈥搉anoelectronics. Here, a new ...