Xiao-Shuang Chen2,3, Ping-An Hu1,2 & Liang Zhen1,2 Ternary metal dichalcogenides alloys exhibit compositionally tunable optical properties and electronic structure, and therefore, band gap engineering by controllable doping would provide a powerful approach to promote their physical and chemical...
band-gap shrinkagecharge transferdensity functional theoryresonant inelastic X-ray scatteringV-doped 2D layered SnS 2X-ray absorptionEffects of electronic and atomic structures of V-doped 2D layered SnS2are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. ...
2H-SnS2 is a semiconductor with an indirect band gap of ~2.2 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. SnS2 belongs to the group-14 post-transition metal dichalcogenides. The 2H phase Tin Disulfide crystals produced at HQ...
the relative band alignment can be modulated through electrostatic gating due to the van der Waals gap between the neighboring layers, theoretically suggesting that the type-II band alignment in the off-state could be modulated to type-III band alignment in the on-state for high drive current8....
SnO2 is a stable, wide band gap, oxide semiconductor (Eg = 3.5–3.6 eV), and can form a heterostructure with SnS2 according to their matched band potentials, which brings about the sensitization of SnO2 and enhances the separation of photogenerated electrons and holes [32], [33], [...
SnS2 is a two-dimensional (2D) material with layered hexagonal crystal structure [1], which has the advantages of narrow band gap (2.11 eV), broadband response and good thermal stability. However, the photogenerated carriers of SnS2 are easy to recombine and have low quantum efficiency, which...
Besides, for the latter structure, the main WSe2 Raman peak is redshifted by an amount of 0.3 cm−1 toward lower frequencies with respect to the peak of ML structure, similarly to the PL peak, which also exhibits a downshift of almost 20 meV for the optical band gap. It should be ...
Analyzing the density of states, it is found that the conduction band in a doped system is primarily made of the Sn-5s orbital and the S-3p orbital, and the valence band is primarily made of Sn-5p orbital and S-3p orbital, with the majority of S-3p orbital. The conduction and ...
The photocurrent response can be observed for exciting photon energies lower as well as higher than the band gap, and is found to increase linearly with the light intensity and the applied bias voltage. Photoresponse times of faster than 5 ms, of several tens of seconds and 10 h are ...
Increasing doping concentration from 1 to 4%, causes decrease in: single-crystal grains from 14.68 to 6.31 nm, optical band gap from 2.75 to 2.62 eV, carrier concentration from 3.11 × 1017 to 2.58 × 1017 cm−3, and Hall mobility from 1.81 to 0.13 cm2/v ...