Morpurgo, Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated transistors, Nano Lett. 12 (2012) 5218-5223.Braga D.; Gutierrez Lezama, I.; Berger, H.; Morpurgo, A. F. Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated ...
I. Yakobson, Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2, Annalen Der Physik, 526, L7 (2014).Wang, L.; Kutana, A.; Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained ...
Monolayer tungsten disulphide (WS2) is a direct band gap semiconductor which holds promise for a wide range of optoelectronic applications. The large-area ... simonj - 《Journal of Materials Science》 被引量: 0发表: 2022年 Precise, portable and wide band alternating current source for extremely...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2 Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS2) and tungsten disul... L Wang,A Kutana,BI Yakobson - 《An...
The band gap energies have been observed to range between 2.4 and 2.8 eV [148,149]. It is well-known that a semiconductor's optimal band-gap energy must be below 3.0 eV, in order to capture visible-light for producing enough amount of electron hole pairs accompanying significant amount of...
As a model system, we study chemical vapor deposition grown monolayer WS2, a prototypical, direct gap, two-dimensional semiconductor. By cross-correlating nanoscale angle-resolved photoemission spectroscopy, core level spectroscopy, and photoluminescence, we unravel how local variations in defect density ...
同时, 由于导带底和价带顶分别由WS2(或WSe2) 和GaN贡献, 这两种复合结构形成了第二类异质结. springer UV–Vis spectra and X-ray photoelectron spectroscopy measurements revealed that thevalence bandoffsets (VBOs) of the different heterojunctions were similar, but their conduction band offsets (CBOs) were...
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ...
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor.Phys. Rev. Lett.105, 136805 (2010). Google Scholar Zhao, W. et al. Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2 .Nano Lett.13, 5627–...
A first-principles pseudopotential method combined with the virtual-crystal approximation (VCA) is used to calculate band offsets of Al xGa 1-xP-GaP(001) heterostructures. It was found that both the valence and conduction band offsets vary linearly with the alloy composition. Our results are in...