Braga, D.; Gutierrez Lezama, I.; Berger, H.; Morpurgo, A. F. Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors. Nano Lett. 2012, 12, 5218-5223.Braga, D.; Lezama, I. G.; Berger, H.; Morpurgo, A. F. Quanti- tative Determination of...
Understanding the possibility of band-gap engineering in multilayers composed of two-dimensional materials is extremely important for modeling and creation of novel electronic and photonic devices. Stacking of WS2and WSe2monolayers looks particularly attractive for applications due to direct gap of resulting...
Band Gap Engineering of Atomic Layer Semiconductor Nanosheets Transition-metal dichalcogenides(TMDs), such as Mo S2, Mo Se2, WS2, and WSe2, have recently attracted considerable interest as a new class of atomically th... H Li,X Wu,X Duan,... - International Conference on Nanoscience & Techn...
Selective growth of wide band gap atomically thin Sb 2 O 3 inorganic molecular crystal on WS 2 vapor phase epitaxyselective growthSb2O3/WS2... G Sun,B Li,S Wang,... - 《纳米研究(英文版)》 被引量: 0发表: 2019年 The ISME Journal - Quorum quenching quandary: resistance to antivirulence...
The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. Compared with gapless graphene1...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2 Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS2) and tungsten disul... L Wang,A Kutana,BI Yakobson - 《An...
Shoucong Ning4,Yongwen Tan2, Takeshi Fujita2,3, Akihiko Hirata2,3 & Mingwei Chen1,2,3 Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic ...
Band-gap voltage reference circuit having multiple branches A band-gap voltage reference circuit having first and second branches respectively including first and second groups of transistors of different emitter cu... T Sicard 被引量: 0发表: 2015年 Toward selective transfer of CVD monolayer WS2 bas...
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor.Phys. Rev. Lett.105, 136805 (2010). Google Scholar Zhao, W. et al. Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2 .Nano Lett.13, 5627–...
The band gap energies have been observed to range between 2.4 and 2.8 eV [148,149]. It is well-known that a semiconductor's optimal band-gap energy must be below 3.0 eV, in order to capture visible-light for producing enough amount of electron hole pairs accompanying significant amount of...