2,3 What’s more, the lattice mismatch issues between different bulk materials have also limited the development of novel heterostructure transistors.4 Heterostructure transistors with optimized electrical band structure can better support device structure innovation and performance breakthroughs. For example,...
Daniele BragaIgnacio Gutiérrez LezamaHelmuth BergerAlberto F. MorpurgoBraga, D.; Lezama, I. G.; Berger, H.; Morpurgo, A. F. Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated transistors. Nano Lett. 2012, 12, 5218-5223....
With the decrease in the number of layers, the bandgap of MoS2 is increased to 1.8–1.9 eV from 1.3 eV of the bulk MoS2, indicating the direct effect of the number of layers in the electrical properties [55]. In addition, the synthesis of single or few-layer MoS2 enlarges the physical...
13. One of our motivations was to find out whether some of the LIS of Er lie within the band gap of SL WS_2. We were able to show that this is indeed the case. The reason for our motivation is that LIS inside the band gap of a semiconductor can be potentially used as a qubit ...
Results and Discussion In comparison to the bulk counterparts, indirect-direct band gap crossover occurs in TMD monolayers due to the absence of inversion symmetry21. The band structures of TMD monolayers share similar- ities (see Figure S1, supplementary information), with the direct band gap ...
Building upon significant achievements in nonlinear optics based on conventional bulk materials, the modern research trend has shifted towards the miniaturization of nonlinear optical components placed in more compact setups embracing 2D materials. The direct energy gap in TMDs makes them an excellent ...
For WSe2 "non-reactive" intercalation occurs at room temperature which follows the rigid band model. At 120 K a metallic Na overlayer is formed. The observed reactivity is discussed in terms of bulk thermodynamics and the obtained difference is tentatively related to differences in the electronic ...
First principle calculations have been performed to investigate the influence of mechanical strains on the electronic and dielectric properties of monolayer honeycomb structure of WS2. Our results reveal that mechanical strains reduce the band gap causing a direct-indirect band gap and semiconductor-metal...
Bulk WS2 has an indirect band gap of 1.3 eV, while the monolayer WS2 changes to a direct gap semiconductor of 1.8 eV [14]. It has been reported that the electronic properties of the TMDs can be easily modified by low doping levels [15], [16], [17]. Yang et al. have studied the...
Recently, various experimental studies have reported the synthesis of TMDs monolayer, such as MoS2, WS2, MoSe2, MoTe2 [[35], [36], [37]]. In the typical layered TMDs family, it has been found that the bulk WX2 (X = S, Se, Te) is indirect bandgap semiconductor, while the ...