It shows that electric field can tune the band gap of SnS multilayer and induce a phase transition from semiconductor to semi-metal. The critical electric field of phase transition for SnS bilayer is 0.09 V/, which is lower than MoS2(0.3 V/), MoSe2(0.25 V/), MoTe2(0.2 V/), WS2(...
doi:10.1002/admt.201900853flexible strain sensorsSnSSe flakesstrain-induced band-gap tuningLena DuCong WangWenqi XiongBin WeiFengyou YangShengyao ChenLijun MaXiaofeng WangCongxin XiaXinzheng ZhangJohn Wiley & Sons, LtdAdvanced Materials Technologies...
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ...
Experimentally it has been shown that the band gap dependence in most semiconductor alloys or solid solu- tions AxB1−xC as a function of composition x follows the parabolic function15 Eg = xEgAC + (1 − x)EgBC − bx(1 − x) (1) wpahrearme eEtgeArC. aSnindcEe gBthCearbean...
Experimentally it has been shown that the band gap dependence in most semiconductor alloys or solid solu- tions AxB1−xC as a function of composition x follows the parabolic function15 Eg = xEgAC + (1 − x)EgBC − bx(1 − x) (1) wpahrearme eEtgeArC. aSnindcEe gBthCearbean...
Empirical formulae are obtained relating the direct band-gap energy of semiconductors and the mean atomic number of the constituent atoms. The formulae are used to indicate doubtful values and to obtain the values of bowing parameters of energy band-gaps of ternaries and quaternaries. Derived val...
However, GaP has an indirect band gap which requires a relatively large absorption depth in comparison to the relatively low minority carrier diffusion length18 and poor surface kinetics13. Ternary III-V alloys have received a lot of attention due to their ability to exhibit tunable band gaps by...
(1) can also be used to predict the melting behavior of GaN nanocrystals. Formula To deduce the size dependent band gap of GaN, a well-known Arrhenius expression for the size and temperature dependent electrical conductivity μ(D,T) is introduced, µ (D, T) = µ0 (D) exp ...
www.nature.com/scientificreports OPEN Received: 18 November 2016 Accepted: 6 April 2017 Published: xx xx xxxx Tunability of Band Gap and Photoluminescence in CH3NH3PbI3 Films by Anodized Aluminum Oxide Templates Zhan Zhang, Min Wang, Lixia Ren & Kexin Jin Hybrid organic-inorganic halide CH3NH3...
www.nature.com/scientificreports OPEN Tuning the band gap, optical, mechanical, and electrical features of a bio‑blend by C r2O3/V2O5 nanofillers for optoelectronics and energy applications Tarek I. Alanazi 1, Raghad A. Alenazi 1 & Adel M. El ...