SnO2MultilayerDFTBand-gap engineering•Band Gap Engineering of SnO2thin film by Strain: a theoretical study.•The tuning structure and band gap of SnO2thin film were investigated.•Theoretically The band-gap engineering is a powerful technique for the design of new semiconductor....
UV–VIS-DRS spectroscopy illustrates that the band gap energy of 400 °C and 500 °C annealed materials are 3.42 and 3.35 eV, respectively. First time, the electrical properties and photosensitivity of the Al-SnO2 nanocrystallites annealed at two different temperatures are studied by making the ...
The electronic structure and band alignment of TMDs is important for device applications, such as the TFET where a staggered or broken-gap band alignment between the two TMD layers is desired (Gong et al., 2015; Zhang et al., 2017). The early work on TMD band alignments was performed usi...
04 November 2016 Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration JunYoung Choi1, Keun Heo1, Kyung-Sang Cho2, Sung Woo Hwang2, Sangsig Kim1 & Sang Yeol Lee3 We investigated the band gap of SiZnSnO (SZTO) wi...
A prototype diagram of this kind (quoting experimental data for TiO2, SnO2, ZnO, GaAs, GaP, CdSe, CdS, and SiC) was presented in 1975 by Gleria and Memming [6]. The moti- vation for comparing the band edges with electrochemi- cal potentials of water is obvious: if these ...
Oxide-diluted magnetic semiconductors: a review of the experimental status. J. Phys. Condens. Matter 15, R1583–R1601 (2003). Article CAS Google Scholar Pearton, S. J. et al. Wide band gap ferromagnetic semiconductors and oxides J. Appl. Phys. 93, 1–13 (2003). Article CAS Google ...
The effect of photonic band gap on the photo-catalytic activity of nc-TiO2/SnO2 photonic crystal composite membranes. Chen S L,Wang A J,Dai C,Benziger J B,Liu X C. Chemical Engineering . 2014Chen Sh.-L., Wang A.-J., Dai Ch., Benziger J. B., Liu X.-Ch. The Effect of ...
Enhanced visible light photocatalytic activity in BiOCl/SnO2: heterojunction of two wide band-gap semiconductors A series of BiOCl/SnO2heterojunctions exhibiting exceptional visible light photocatalytic performance have been successfully prepared using a two-step solu... M Sun,Q Zhao,C Du,... - 《Rsc...
The band gap energy for thermally induced electrons and holes in semiconductors is given in Eq. (5). (5)Eg=−lnn0p0NcNv Where n0 and p0 are concentrations of thermal-induced electrons and holes, respectively. By substituting Eq. (4) into Eq. (3), it can be seen that the ΔG is ...
TiO2 is at present preferred over oxides such as ZnO or SnO2 for applications in dye-sensitized solar cell, because of its mesoporous structure, which offers high surface area for efficient dye loading. It is also important that the band gap of the metal oxide can be adjusted for efficient ...